PDX040C120J POTENS
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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S SMPS Solar Inverters Renewable energy EV battery chargers S G D
Potens semiconductor corp. Ver.1.00 PDX040C120J 1200V Silicon Carbide Power MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=100µA 1200 --- --- V IDSS Drain-Source Leakage Current VDS=1200V , VGS=0V , TJ=25℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=22V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=18V , ID=20A --- 40 52 m RDS(ON) Static Drain-Source On-Resistance VGS=15V , ID=20A --- 46 --- m VGS(th) Gate Threshold Voltage VGS=VDS , ID=10mA 2.0 2.8 4.0 V Dynamic and switching Characteristics Qg Total Gate Charge VDS=800V , VGS=-5/18V , IDS=30A --- 90 --- nC Qgs Gate-Source Charge --- 15 --- Qgd Gate-Drain Charge --- 25 --- Td(on) Turn-On Delay Time VDD=800V , VGS=-5/18V , RG=6 , IDS=30A --- 10 --- ns Tr Rise Time --- 15 --- Td(off) Turn-Off Delay Time --- 20 --- Tf Fall Time --- 10 --- Ciss Input Capacitance VDS=1000V , VGS=0V , F=500kHz , VAC=25mV --- 1770 --- pF Coss Output Capacitance --- 105 --- Crss Reverse Transfer Capacitance --- 5 --- Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.75 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 45 A VSD Diode Forward Voltage VGS=-5V , IS=20A , TJ=25℃ --- 4.9 --- V trr Reverse Recovery Time VR=400V, IS=20A di/dt=300A/µs, TJ=25℃ --- 50 --- ns Qrr Reverse Recovery Charge --- 110 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings
Potens semiconductor corp. Ver.1.00 PDX040C120J 1200V Silicon Carbide Power MOSFETs 100 0 2 4 6 8 10 VGS=7V TJ=25°C VGS=9V VGS=11V VGS=13V VGS=18V VGS=15V 0 15 30 45 60 75 90 ID=30A VDS=800V 0.5 1.5 2.5 25 50 75 100 125 150 175 VGS=18V IDS=20A 0.4 0.6 0.8 1.2 1.4 25 50 75 100 125 150 175 VGS=VDS IDS=10mA 100 5 25 45 65 85 105 VGS=18V TJ=25℃ VGS=15V -100 -80 -60 -40 -20 -8 -6 -4 -2 0 VGS=-5V VGS=0V VGS=5V VGS=10V VGS=15V VGS=20V TJ=25℃ ID , Continuous Drain Current (A) Fig.1 Typical Output Characte ristics VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.2 Gate Charge Characteristics Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. ID Fig.6 3rd Quadrant Characteristic ID , Continuous Drain Current (A) VDS ,Drain to Source V oltage (V) ID , Drain Current (A) VDS ,Drain to Source V oltage (V)
Potens semiconductor corp. Ver.1.00 PDX040C120J 1200V Silicon Carbide Power MOSFETs Fig.8 Capacitance Characteristics Fig.10 Power Dissipation Derating vs. TC 100 1000 10000 0 50 100 150 200 Ciss Coss Crss 100 1000 10000 0 200 400 600 800 1000 Ciss Coss Crss -50 -25 0 25 50 75 100 125 150 175 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 175 VDS , Drain to Source V oltage (V) VDS , Drain to Source V oltage (V) Capacitance (pF) (mohm) Capacitance (pF) Fig.7 Capacitance Characteristics TC , Case Temperature (℃) TC , Case Temperature (℃) PD , Power Dissipation (W) (mohm) ID , Continuous Drain Current (A) Fig.9 Continuous Drain Current vs. TC
Potens semiconductor corp. Ver.1.00 PDX040C120J 1200V Silicon Carbide Power MOSFETs SYMBOL mm SYMBOL mm MIN MAX MIN MAX A 4.83 5.21 E2 4.32 5.49 A1 2.29 2.55 E3 2.15 2.80 A2 1.50 2.49 e 5.44BSC b 1.12 1.33 L 19.81 20.32 b1 1.91 2.39 L1 4.10 4.40 b2 2.87 3.22 ΦP 3.56 3.65 C 0.55 0.69 Q 5.39 6.20 D 20.80 21.10 S 6.04 6.30 D1 16.25 17.65 D2 0.51 1.35 E 15.75 16.13 E1 13.46 14.16 TO247 PACKAGE INFORMATION