PDX0080A POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S G  Networking  Load Switch  LED applications  Quick Charger D S

Potens semiconductor corp. Ver.1.02 PDX0080A 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 2.1 2.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 2.5 4 V gfs Forward Transconductance VDS=10V , ID=3A --- 17 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=50V , VGS=10V , ID=80A --- 192 --- nC Qgs Gate-Source Charge3 , 4 --- 18.5 --- Qgd Gate-Drain Charge3 , 4 --- 28 --- Td(on) Turn-On Delay Time3 , 4 VDD=50V , VGS=10V , RG=6 ID=80A --- 55 --- ns Tr Rise Time3 , 4 --- 165 --- Td(off) Turn-Off Delay Time3 , 4 --- 135 --- Tf Fall Time3 , 4 --- 65 --- Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 10100 --- pF Coss Output Capacitance --- 2020 --- Crss Reverse Transfer Capacitance --- 53 --- Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.1 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 260 A ISM Pulsed Source Current --- --- 520 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=100V, IS=10A di/dt=100A/µs , TJ=25℃ --- 210 --- ns Qrr Reverse Recovery Charge --- 600 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=137A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDX0080A 100V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 120 160 200 240 280 25 50 75 100 125 150 120 150 0 0.6 1.2 1.8 2.4 3 VGS=4V VGS=4.5V VGS=5.3V VGS=5V 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 Tc=25℃ ID=10A ID=20A 5 35 65 95 125 155 Tc=25℃ VGS=8V VGS=10V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.02 PDX0080A 100V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

0.1 1 10 100 Ciss Coss Crss 0 40 80 120 160 200 ID=80A VDS=50V 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.02 PDX0080A 100V N-Channel MOSFETs SYMBOL mm SYMBOL mm MIN MAX MIN MAX A 4.83 5.21 E2 4.32 5.49 A1 2.29 2.55 E3 2.15 2.80 A2 1.50 2.49 e 5.44BSC b 1.12 1.33 L 19.81 20.32 b1 1.91 2.39 L1 4.10 4.40 b2 2.87 3.22 ΦP 3.56 3.65 C 0.55 0.69 Q 5.39 6.20 D 20.80 21.10 S 6.04 6.30 D1 16.25 17.65 D2 0.51 1.35 E 15.75 16.13 E1 13.46 14.16 TO247 PACKAGE INFORMATION VERSION A

Potens semiconductor corp. Ver.1.02 PDX0080A 100V N-Channel MOSFETs SYMBOL mm SYMBOL mm MIN MAX MIN MAX A 4.75 5.25 E2 3.70 5.30 A1 2.16 2.66 E3 1.00 2.75 A2 1.75 2.25 e 5.44BSC b 1.07 1.35 L 19.52 20.32 b1 1.90 2.41 L1 4.10 4.40 b2 2.87 3.38 ΦP 3.35 3.85 C 0.50 0.70 Q 5.40 6.20 D 20.60 21.40 S 6.15BSC D1 16.15 17.65 D2 0.95 1.35 E 15.50 16.10 E1 12.40 13.60 VERSION B