PDV005P15Z POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOT363 Pin Configuration D G S  Networking  Load Switch  LED applications Applications S D D G D D

Potens semiconductor corp. Ver.1.00 PDV005P15Z 150V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250µA -150 --- --- V IDSS Drain-Source Leakage Current VDS=-150V , VGS=0V , TJ=25℃ --- --- -1 µA VDS=-120V , VGS=0V , TJ=125℃ --- --- -10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-0.5A --- 1.6 2.1  VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250µA -2 -3 -4 V Dynamic and switching Characteristics Qg Total Gate Charge3 VDS=-75V , VGS=-10V , ID=-0.25A --- 3.7 9 nC Qgs Gate-Source Charge3 --- 1 3 Qgd Gate-Drain Charge3 --- 0.8 3 Td(on) Turn-On Delay Time3 VDD=-75V , VGS=-10V , RG=6 ID=-0.25A --- 4 8 ns Tr Rise Time3 --- 8 16 Td(off) Turn-Off Delay Time3 --- 6 12 Tf Fall Time3 --- 10 20 Ciss Input Capacitance VDS=-75V , VGS=0V , F=1MHz --- 150 300 pF Coss Output Capacitance --- 13 25 Crss Reverse Transfer Capacitance --- 7.5 15 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -0.5 A ISM Pulsed Source Current --- --- -1 A VSD Diode Forward Voltage VGS=0V , IS=-0.5A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDV005P15Z 150V P-Channel MOSFETs 0.2 0.4 0.6 0.8 0 2 4 6 8 10 VGS=-4.3V VGS=-4.5V VGS=-4.7V VGS=-5V VGS=-6V VGS=-5.3V 0.5 0.7 0.9 1.1 1.3 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=-0.5A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tc=25℃ VGS=-6V VGS=-10V -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (ohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (ohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDV005P15Z 150V P-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics -VGS -10V / -4.5V Qg QgdQgs Gate Charge 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0 1 2 3 4 ID=-0.25A VDS=-75V 100 0.1 1 10 100 Ciss Coss Crss 0.001 0.01 0.1 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDV005P15Z 150V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 A1 0.100 0.000 0.004 0.000 A2 1.000 0.800 0.039 0.031 b 0.330 0.100 0.013 0.004 c 0.250 0.100 0.010 0.004 D 2.200 1.800 0.087 0.071 E 1.350 1.150 0.053 0.045 E1 2.400 1.800 0.094 0.071 e 0.65BSC 0.026BSC L1 0.350 0.100 0.014 0.004 SOT363 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDV005P15Z 150V P-Channel MOSFETs SOT363 RECOMMENDED LAND PATTERN unit : mm