PDU69C4Z POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  Notebook  Load Switch  Battery Protection  Hand-held Instruments D G S

Potens semiconductor corp. Ver.1.00 PDU69C4Z 60V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=1.2A --- 90 108 m VGS=4.5V , ID=1A --- 103 135 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.5 V gfs Forward Transconductance VDS=10V , ID=1A --- 1.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=30V , VGS=10V , ID=0.6A --- 4.3 6.5 nC Qgs Gate-Source Charge2 , 3 --- 0.4 3 Qgd Gate-Drain Charge2 , 3 --- 0.8 3 Td(on) Turn-On Delay Time2 , 3 VDD=30V , VGS=10V , RG=6 ID=0.6A --- 1 2 ns Tr Rise Time2 , 3 --- 2.5 4 Td(off) Turn-Off Delay Time2 , 3 --- 3 5 Tf Fall Time2 , 3 --- 4 6 Ciss Input Capacitance VDS=30V , VGS=0V , F=1MHz --- 205 310 pF Coss Output Capacitance --- 20 30 Crss Reverse Transfer Capacitance --- 12 20 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 5.3 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 1.2 A ISM Pulsed Source Current --- --- 2.4 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=50V, IS=4A di/dt=100A/µs, TJ=25℃ --- 15 --- ns Qrr Reverse Recovery Charge --- 10 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDU69C4Z 60V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 0 2 4 6 8 10 VGS=3V VGS=4V VGS=3.5V VGS=3.3V 100 110 120 130 0 2 4 6 8 10 Tc=25℃ ID=1.2A 100 110 120 Tc=25℃ VGS=4.5V VGS=10V VGS=6V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDU69C4Z 60V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 100 1000 0.1 1 10 Ciss Coss Crss 0 1 2 3 4 5 ID=0.6A VDS=30V 0.001 0.01 0.1 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDU69C4Z 60V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 A1 0.100 0.000 0.004 0.000 A2 1.000 0.800 0.039 0.031 b 0.400 0.200 0.016 0.008 c 0.250 0.080 0.010 0.003 D 2.200 1.800 0.087 0.071 E 1.350 1.150 0.053 0.045 E1 2.450 1.800 0.096 0.071 e 0.65BSC 0.026BSC e1 1.400 1.200 0.055 0.047 L 0.525REF. 0.021REF. L1 0.460 0.150 0.018 0.006 L2 0.200 0.000 0.008 0.000 θ 8° 0° 8° 0° SOT323 PACKAGE INFORMATION