PDU3616Z POTENS

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D G S  Notebook  Load Switch  Battery Protection  Hand-held Instruments D G S

Potens semiconductor corp. Ver.1.03 PDU3616Z 30V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=1A --- 34 41 m VGS=4.5V , ID=0.5A --- 41 50 m VGS=2.5V , ID=0.3A --- 62 85 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.8 1.2 V gfs Forward Transconductance VDS=10V , IS=2A --- 2.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=15V , VGS=10V , ID=1A --- 3.5 6 nC Qgs Gate-Source Charge2 , 3 --- 0.1 0.2 Qgd Gate-Drain Charge2 , 3 --- 1 1.5 Td(on) Turn-On Delay Time2 , 3 VDS=15V , VGS=10V , RG=6 ID=1A --- 6 9 ns Tr Rise Time2 , 3 --- 9 13 Td(off) Turn-Off Delay Time2 , 3 --- 33 50 Tf Fall Time2 , 3 --- 4 6 Ciss Input Capacitance VDS=15, VGS=0V , F=1MHz --- 240 360 pF Coss Output Capacitance --- 40 60 Crss Reverse Transfer Capacitance --- 30 45 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 1.8 A ISM Pulsed Source Current --- --- 3.6 A VSD Diode Forward Voltage VGS=0V , IS=0.2A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=30V, IS=1A di/dt=100A/µs, TJ=25℃ --- 150 --- ns Qrr Reverse Recovery Charge --- 270 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDU3616Z 30V N-Channel MOSFETs Fig.6 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.4 0.8 1.2 1.6 25 50 75 100 125 150 0 1 2 3 4 ID=1A VDS=15V 0.001 0.01 0.1 0.1 1 10 TC=25℃ DC 100ms 10ms 100us 10us 1ms ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Normalized Thermal Response ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.03 PDU3616Z 30V N-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%

Potens semiconductor corp. Ver.1.03 PDU3616Z 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 A1 0.100 0.000 0.004 0.000 A2 1.000 0.800 0.039 0.031 b 0.400 0.200 0.016 0.008 c 0.250 0.080 0.010 0.003 D 2.200 1.800 0.087 0.071 E 1.350 1.150 0.053 0.045 E1 2.450 1.800 0.096 0.071 e 0.65BSC 0.026BSC e1 1.400 1.200 0.055 0.047 L 0.525REF. 0.021REF. L1 0.460 0.150 0.018 0.006 L2 0.200 0.000 0.008 0.000 θ 8° 0° 8° 0° SOT323 PACKAGE INFORMATION