PDU2315Z POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

D S G D G S

Potens semiconductor corp. Ver.1.00 PDU2315Z 20V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage VGS =0V , I D=-250uA -20 --- --- V △ BV DSS /△ TJ BV DSS Temperature Coefficient Reference to 25 ℃ , I D=-1mA --- -0.01 --- V/ ℃ IDSS Drain-Source Leakage Current VDS =-20V , V GS =0V , T J=25 ℃ --- --- -1 uA VDS =-16V , V GS =0V , T J=125 ℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS = ± 10V , V DS =0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance mΩ VGS =-2.5V , I D=-1A --- 100 130 VGS(th) Gate Threshold Voltage VGS =V DS , I D =-250uA -0.3 -0.6 -1.0 V △ VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/ ℃ gfs Forward Transconductance VDS =-10V , I S=-1A --- 2.2 --- S Dynamic and switching Characteristics Qg Total Gate Charge 2 , 3 VDS =-10V , V GS =-4.5V , I D=-1A --- 4.8 8 nC Qgs Gate-Source Charge 2 , 3 --- 0.5 1 Qgd Gate-Drain Charge 2 , 3 --- 1.9 4 Td(on) Turn-On Delay Time 2 , 3 VDD =-10V , V GS =-4.5V , R G=25 Ω ID=-1A --- 3.5 7 ns Tr Rise Time 2 , 3 --- 12.6 24 Td(off) Turn-Off Delay Time 2 , 3 --- 32.6 62 Tf Fall Time 2 , 3 --- 8.4 16 Ciss Input Capacitance VDS =-15V , V GS =0V , F=1MHz --- 350 510 pF Coss Output Capacitance --- 65 95 Crss Reverse Transfer Capacitance --- 50 75 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=V D=0V , Force Current --- --- -1.5 A ISM Pulsed Source Current --- --- -3 A VSD Diode Forward Voltage VGS =0V , I S=-1A , T J=25 ℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maxi mum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature . Electrical Characteristics (T J=25 ℃ , unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDU2315Z 20V P-Channel MOSFETs -ID , Continuous Drain Current (A) Normalized On Resistance (m Ω ) TC , Case Temperature ( ℃ ) Fig.1 Continuous Drain Current vs. T C TJ , Junction Temperature ( ℃ ) Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold V oltage (V) TJ , Junction Temperature ( ℃ ) Fig. 3 Normalized Vth vs. T J -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig. 4 Gate Charge Waveform Normalized Thermal Response (R ΘJA ) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Response -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V ) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.00 PDU2315Z 20V P-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.00 PDU2315Z 20V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 A1 0.100 0.000 0.004 0.000 A2 1.000 0.800 0.039 0.031 b 0.400 0.200 0.016 0.008 c 0.250 0.080 0.010 0.003 D 2.200 1.800 0.087 0.071 E 1.350 1.150 0.053 0.045 E1 2.450 1.800 0.096 0.071 e 0.65BSC 0.026BSC e1 1.400 1.200 0.055 0.047 L 0.525REF. 0.021REF. L1 0.460 0.150 0.018 0.006 L2 0.200 0.000 0.008 0.000 θ 8° 0° 8° 0° SOT323 PACKAGE INFORMATION