PDT89E6BH POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications TOLL Pin Configuration D G S G  Networking  Load Switch  LED applications  Quick Charger D S S S S S S S S S S S S S S G D

Potens semiconductor corp. Ver.1.00 PDT89E6BH 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V IDSS Drain-Source Leakage Current VDS=64V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=85℃ --- --- 30 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=30A --- 0.9 1.1 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 2.8 4 V gfs Forward Transconductance VDS=10V , ID=3A --- 20 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=40V , VGS=10V , ID=100A --- 206 310 nC Qgs Gate-Source Charge3 , 4 --- 54 80 Qgd Gate-Drain Charge3 , 4 --- 56 85 Td(on) Turn-On Delay Time3 , 4 VDD=40V , VGS=10V , RG=6 ID=100A --- 30 45 ns Tr Rise Time3 , 4 --- 70 105 Td(off) Turn-Off Delay Time3 , 4 --- 40 60 Tf Fall Time3 , 4 --- 80 120 Ciss Input Capacitance VDS=40V , VGS=0V , F=1MHz --- 13000 19500 pF Coss Output Capacitance --- 3100 4650 Crss Reverse Transfer Capacitance --- 54 80 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.9 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 320 A ISM Pulsed Source Current --- --- 640 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=50V, IS=10A di/dt=100A/µs , TJ=25℃ --- 125 --- ns Qrr Reverse Recovery Charge --- 460 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=1mH,IAS=86A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDT89E6BH 80V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 120 150 0 2 4 6 8 10 VGS=4.3V VGS=4.5V VGS=4.7V VGS=5V 2 4 6 8 10 Tc=25℃ ID=20A ID=30A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 30 50 70 90 110 Tc=25℃ VGS=6V VGS=10V 140 210 280 350 25 50 75 100 125 150 ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDT89E6BH 80V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

ID=100A VDS=40V 100 1000 10000 100000 0.1 1 10 Ciss Coss Crss 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDT89E6BH 80V N-Channel MOSFETs SYMBOL mm SYMBOL mm MIN NOM MAX MIN NOM MAX A1 1.70 1.80 1.90 H1 6.95 BSC b 0.70 0.80 0.90 H2 5.89 BSC b1 9.70 9.80 9.90 i 0.10 REF b3 1.10 1.20 1.30 j 0.46 REF c 0.40 0.50 0.60 K 2.80 REF E 9.80 9.90 10.00 N 8 E1 8.00 8.10 8.20 Q 8.00 REF e 1.20 BSC θ 10o REF TOLL PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDT89E6BH 80V N-Channel MOSFETs TOLL RECOMMENDED LAND PATTERN unit : mm