PDS8982B POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

Applications

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOP8 Pin Configuration D G S D G S  Networking  Load Switch  LED applications D D D S S

Potens semiconductor corp. Ver.1.00 PDS8982B 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=6A --- 6.7 8 m VGS=4.5V , ID=5A --- 9.4 12.2 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V gfs Forward Transconductance VDS=10V , ID=3A --- 10 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=40V , VGS=10V , ID=10A --- 31.3 47 nC Qgs Gate-Source Charge3 , 4 --- 3.9 5.9 Qgd Gate-Drain Charge3 , 4 --- 9.5 14 Td(on) Turn-On Delay Time3 , 4 VDD=40V , VGS=10V , RG=6 ID=8A --- 22 33 ns Tr Rise Time3 , 4 --- 16 24 Td(off) Turn-Off Delay Time3 , 4 --- 40 60 Tf Fall Time3 , 4 --- 31 47 Ciss Input Capacitance VDS=40V , VGS=0V , F=1MHz --- 1720 2580 pF Coss Output Capacitance --- 350 525 Crss Reverse Transfer Capacitance --- 10.5 16 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.1 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 12 A ISM Pulsed Source Current --- --- 24 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/µs , TJ=25℃ --- 35 --- ns Qrr Reverse Recovery Charge --- 35 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDS8982B 80V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TJ TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Qg , Gate Charge (nC) Fig.6 Maximum Safe Operation Area TJ , Junction Temperature (℃) Normalized Thermal Response Square Wave Pulse Duration (s) ID , Drain Current (A) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.00 PDS8982B 80V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.00 PDS8982B 80V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.350 1.750 0.053 0.068 A1 0.100 0.250 0.004 0.009 A2 1.300 1.500 0.052 0.059 A3 0.600 0.700 0.024 0.027 b 0.390 0.480 0.016 0.018 c 0.210 0.260 0.009 0.010 D 4.700 5.100 0.186 0.200 E 5.800 6.200 0.229 0.244 E1 3.700 4.100 0.146 0.161 e 1.270(BSC) 0.050(BSC) h 0.250 0.500 0.010 0.019 L 0.500 0.800 0.019 0.031 L1 1.050(BSC) 0.041(BSC) θ 0° 8° 0° 8° SOP8 PACKAGE INFORMATION