PDS04N15BH POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 Networking  Load Switch  LED applications SOP8 Pin Configuration D G S D D D D G S S S

Potens semiconductor corp. Ver.2.00 PDS04N15BH 150V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=120V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=4A --- 38 46 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 3.5 4.5 V gfs Forward Transconductance VDS=10V , ID=3A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=75V , VGS=10V , ID=2A --- 17.4 30 nC Qgs Gate-Source Charge3 , 4 --- 2.7 5 Qgd Gate-Drain Charge3 , 4 --- 6.1 10 Td(on) Turn-On Delay Time3 , 4 VDD=75V , VGS=10V , RG=6 ID=2A --- 4.6 10 ns Tr Rise Time3 , 4 --- 15 25 Td(off) Turn-Off Delay Time3 , 4 --- 27 45 Tf Fall Time3 , 4 --- 8 15 Ciss Input Capacitance VDS=75V , VGS=0V , F=1MHz --- 835 1300 pF Coss Output Capacitance --- 75 120 Crss Reverse Transfer Capacitance --- 7 15 Rg Gate Resistance VGS=0V , VDS=0V , F=1MHz --- 0.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 4 A ISM Pulsed Source Current --- --- 8 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 VR=100V, IS=2A , dI/dt=100A/µs , TJ=25℃ --- 70 --- ns Qrr Reverse Recovery Charge3 --- 250 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,L=0.1mH,IAS=24A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.2.00 PDS04N15BH 150V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0 2 4 6 8 10 VGS=4.7V VGS=5VVGS=5.3V VGS=10V 4 5 6 7 8 Tc=25℃ VGS=8V VGS=10V 4 5 6 7 8 9 10 Tc=25℃ ID=4A ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.2.00 PDS04N15BH 150V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 100 1000 0.1 1 10 100 Ciss Coss Crss 0 4 8 12 16 20 ID=2A VDS=75V 0.001 0.01 0.1 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source Voltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.2.00 PDS04N15BH 150V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.350 1.800 0.053 0.069 A1 0.050 0.250 0.002 0.010 A2 1.250 1.650 0.049 0.065 A3 0.500 0.700 0.020 0.028 b 0.300 0.510 0.012 0.020 c 0.150 0.260 0.006 0.010 D 4.700 5.100 0.185 0.201 E 5.800 6.200 0.228 0.244 E1 3.700 4.100 0.146 0.161 e 1.270(BSC) 0.050(BSC) h 0.250 0.500 0.010 0.020 L 0.400 1.000 0.016 0.039 L1 1.050(BSC) 0.041(BSC) θ 0° 8° 0° 8° SOP8 PACKAGE INFORMATION