PDR8944 POTENS

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 Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO251 Pin Configuration D G S S D G

Potens semiconductor corp. Ver.1.03 PDR8944 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.09 --- V/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- 77 100 m VGS=4.5V , ID=8A --- 80 115 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=10A --- 7 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=40V , VGS=10V , ID=10A --- 19.2 29 nC Qgs Gate-Source Charge3 , 4 --- 3.3 6 Qgd Gate-Drain Charge3 , 4 --- 3.5 7 Td(on) Turn-On Delay Time3 , 4 VDD=30V , VGS=10V , RG=6 ID=1A --- 5 10 ns Tr Rise Time3 , 4 --- 25 50 Td(off) Turn-Off Delay Time3 , 4 --- 22 44 Tf Fall Time3 , 4 --- 8 16 Ciss Input Capacitance VDS=30V , VGS=0V , F=1MHz --- 1070 1550 pF Coss Output Capacitance --- 40 60 Crss Reverse Transfer Capacitance --- 35 50 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1 2  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 12 A ISM Pulsed Source Current --- --- 24 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=50V, IS=10A di/dt=100A/µs, TJ=25℃ --- 25 --- ns Qrr Reverse Recovery Charge --- 25 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=20A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDR8944 80V N-Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.03 PDR8944 80V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.03 PDR8944 80V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.200 2.400 0.087 0.094 A1 0.910 1.110 0.036 0.044 B 6.500 6.700 0.256 0.264 C 0.460 0.580 0.018 0.023 C1 0.460 0.580 0.018 0.023 D 5.120 5.520 0.202 0.217 E 2.186 2.386 0.086 0.094 F 0.780 1.020 0.030 0.040 F1 0.660 0.860 0.026 0.034 L 10.200 10.800 0.402 0.425 L1 3.200 3.800 0.126 0.150 L2 6.000 6.200 0.236 0.244 M 1.000 1.200 0.039 0.047 θ 3° 9° 3° 9° TO251 PACKAGE INFORMATION