PDR6905 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  Motor Drive  Power Tools  LED Lighting S D G D S D G

Potens semiconductor corp. Ver.1.02 PDR6905 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-8A --- 39 48 m VGS=-4.5V , ID=-4A --- 53 65 m VGS(th) Gate Threshold Voltage VGS=VDS , ID=-250uA -1.2 -1.6 -2.2 V △VGS(th) VGS(th) Temperature Coefficient --- 5 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-8A --- 10 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-30V , VGS=-10V , ID=-8A --- 22.4 31 nC Qgs Gate-Source Charge3 , 4 --- 4.1 6 Qgd Gate-Drain Charge3 , 4 --- 5.2 8 Td(on) Turn-On Delay Time3 , 4 VDD=-30V , VGS=-10V , RG=6 ID=-8A --- 13 25 ns Tr Rise Time3 , 4 --- 42.4 81 Td(off) Turn-Off Delay Time3 , 4 --- 64.6 123 Tf Fall Time3 , 4 --- 16.4 31 Ciss Input Capacitance VDS=-30V , VGS=0V , F=1MHz --- 1250 1810 pF Coss Output Capacitance --- 85 125 Crss Reverse Transfer Capacitance --- 65 95 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 15 30  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -16 A ISM Pulsed Source Current --- --- -64 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-50V, IS=-10A di/dt=100A/µs, TJ=25℃ --- 30 --- ns Qrr Reverse Recovery Charge --- 20 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-32A.,RG=25,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.02 PDR6905 60V P-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 10 VGS=-3V VGS=-3.3V VGS=-4.5V 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=-4A ID=-8A 5 8 11 14 17 20 Tc=25℃ VGS=-4.5V VGS=-6V VGS=-10V -ID , Continuous Drain Current (A) Fig.1 Typical O utput Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.02 PDR6905 60V P-Channel MOSFETs Fig.11 Maximum Safe Operation Area Fig.8 Gate Charge Characteristics 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 6 12 18 24 ID=-8A VDS=-30V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 0 1 2 3 4 5 Tc=25℃ Tc=125℃ VDS=-10V 100 1000 0.1 1 10 Ciss Coss Crss -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.10 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics Fig.9 Transfer Characteristics -VGS , Gate to Source V oltage (V) -ID, Drain Current (A)

Potens semiconductor corp. Ver.1.02 PDR6905 60V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.500 2.100 0.098 0.083 A1 1.250 0.900 0.049 0.035 B 6.800 6.400 0.268 0.252 C 0.580 0.420 0.023 0.017 C1 0.580 0.420 0.023 0.017 D 5.500 5.000 0.217 0.197 E 2.400 2.000 0.094 0.079 F 1.050 0.750 0.041 0.030 F1 0.900 0.650 0.035 0.026 L 12.400 11.600 0.488 0.457 L1 5.300 4.700 0.209 0.185 L2 6.300 5.700 0.248 0.224 θ 9° 3° 9° 3° TO251 PACKAGE INFORMATION