PDR4906 POTENS

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Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  Networking  Load Switch  LED applications  Quick Charger D G S S D G D

Potens semiconductor corp. Ver.1.02 PDR4906 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=8A --- 6.5 8.5 m VGS=4.5V , ID=4A --- 9 12 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=10A --- 13 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=4.5V , ID=8A --- 12.2 24 nC Qgs Gate-Source Charge3 , 4 --- 3.3 7 Qgd Gate-Drain Charge3 , 4 --- 6.7 13 Td(on) Turn-On Delay Time3 , 4 VDD=15V, VGS=10V , RG=3.3 ID=1A --- 13.2 25 ns Tr Rise Time3 , 4 --- 2.2 5 Td(off) Turn-Off Delay Time3 , 4 --- 72 130 Tf Fall Time3 , 4 --- 4.5 10 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 1220 2200 pF Coss Output Capacitance --- 130 250 Crss Reverse Transfer Capacitance --- 55 110 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.2 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 50 A ISM Pulsed Source Current --- --- 100 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 VGS=0V,IS=1A , dI/dt=100A/µs TJ=25℃ --- 17 --- ns Qrr Reverse Recovery Charge3 --- 2.8 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=39A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDR4906 40V N-Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.02 PDR4906 40V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.02 PDR4906 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.500 2.100 0.098 0.083 A1 1.250 0.900 0.049 0.035 B 6.800 6.400 0.268 0.252 C 0.580 0.420 0.023 0.017 C1 0.580 0.420 0.023 0.017 D 5.500 5.000 0.217 0.197 E 2.400 2.000 0.094 0.079 F 1.050 0.750 0.041 0.030 F1 0.900 0.650 0.035 0.026 L 12.400 11.600 0.488 0.457 L1 5.300 4.700 0.209 0.185 L2 6.300 5.700 0.248 0.224 θ 9° 3° 9° 3° TO251 PACKAGE INFORMATION