PDR0906 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  Networking  Load Switch  LED applications D G S S D G D

Potens semiconductor corp. Ver.1.01 PDR0906 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=5A --- 72 90 m VGS=4.5V , ID=3A --- 75 100 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 8.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=48V , VGS=10V , ID=5A --- 9.3 13 nC Qgs Gate-Source Charge2 , 3 --- 2.1 4.2 Qgd Gate-Drain Charge2 , 3 --- 1.8 4 Td(on) Turn-On Delay Time2 , 3 VDD=30V , VGS=10V , RG=3.3 ID=1A --- 2.9 6 ns Tr Rise Time2 , 3 --- 9.5 18 Td(off) Turn-Off Delay Time2 , 3 --- 18.4 35 Tf Fall Time2 , 3 --- 5.3 10 Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 1480 2150 pF Coss Output Capacitance --- 480 700 Crss Reverse Transfer Capacitance --- 35 55 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.3 2.6  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 15 A ISM Pulsed Source Current --- --- 60 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDR0906 100V N-Channel MOSFETs Fig.6 Maximum Safe Operation Area 0 2 4 6 8 10 ID=5A VDS=48V ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Normalized Thermal Response ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.01 PDR0906 100V N-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%

Potens semiconductor corp. Ver.1.01 PDR0906 100V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.500 2.100 0.098 0.083 A1 1.250 0.900 0.049 0.035 B 6.800 6.400 0.268 0.252 C 0.580 0.420 0.023 0.017 C1 0.580 0.420 0.023 0.017 D 5.500 5.000 0.217 0.197 E 2.400 2.000 0.094 0.079 F 1.050 0.750 0.041 0.030 F1 0.900 0.650 0.035 0.026 L 12.400 11.600 0.488 0.457 L1 5.300 4.700 0.209 0.185 L2 6.300 5.700 0.248 0.224 θ 9° 3° 9° 3° TO251 PACKAGE INFORMATION