PDQ2116 POTENS

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 Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOT23-6 Dual Pin Configuration G S D G D2 S1 D1 G2 S2 G1 G1 G2

Potens semiconductor corp. Ver.1.00 PDQ2116 20V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.02 --- V/℃ IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=3A --- 30 40 m VGS=2.5V , ID=2A --- 42 55 m VGS=1.8V , ID=1.5A 55 70 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.3 0.6 1 V △VGS(th) VGS(th) Temperature Coefficient --- -2 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=2A --- 4.4 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=10V , VGS=4.5V , ID=3A --- 5.8 10 nC Qgs Gate-Source Charge2 , 3 --- 0.6 1.5 Qgd Gate-Drain Charge2 , 3 --- 1.5 3 Td(on) Turn-On Delay Time2 , 3 VDD=10V , VGS=4.5V , RG=25 ID=1A --- 2.9 6 ns Tr Rise Time2 , 3 --- 8.4 16 Td(off) Turn-Off Delay Time2 , 3 --- 19.2 38 Tf Fall Time2 , 3 --- 5.6 12 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 315 600 pF Coss Output Capacitance --- 50 80 Crss Reverse Transfer Capacitance --- 40 60 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 3.8 A ISM Pulsed Source Current --- --- 7.6 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.00 PDQ2116 20V N+P Dual Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.00 PDQ2116 20V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-3A --- 82 100 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.6 -1.0 V △VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-1A --- 2.2 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-10V , VGS=-4.5V , ID=-2A --- 4.8 10 nC Qgs Gate-Source Charge2 , 3 --- 0.5 1 Qgd Gate-Drain Charge2 , 3 --- 1.9 4 Td(on) Turn-On Delay Time2 , 3 VDD=-10V , VGS=-4.5V , RG=25 ID=-1A --- 3.5 7 ns Tr Rise Time2 , 3 --- 12.6 24 Td(off) Turn-Off Delay Time2 , 3 --- 32.6 62 Tf Fall Time2 , 3 --- 8.4 16 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 350 510 pF Coss Output Capacitance --- 65 95 Crss Reverse Transfer Capacitance --- 50 75 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -2.5 A ISM Pulsed Source Current --- --- -5 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 4. Repetitive Rating : Pulsed width limited by maximum junction temperature. 5. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 6. Essentially independent of operating temperature. noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDQ2116 20V N+P Dual Channel MOSFETs Normalized Gate Threshold V oltage (V) Fig.9 Normalized Vth vs. TJ TJ , Junction Temperature (℃) -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.10 Gate Charge Waveform Normalized Thermal Response (RθJA) Square Wave Pulse Duration (s) Fig.11 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.12 Maximum Safe Operation Area -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.7 Continuous Drain Current vs. TC Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.8 Normalized RDSON vs. TJ

Potens semiconductor corp. Ver.1.00 PDQ2116 20V N+P Dual Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.040 0.047 b 0.300 0.500 0.012 0.019 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.800 0.059 0.070 E1 2.600 3.000 0.103 0.118 e 0.950 TYP 0.037 TYP e1 1.900 TYP 0.075 TYP L1 0.250 0.550 0.010 0.021 θ 0° 8° 0° 8° SOT23-6 Dual PACKAGE INFORMATION