PDQ02N15 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  Networking  Load Switch  LED applications SOT23-6 Pin Configuration D G S D D G S D D

Potens semiconductor corp. V e r . 1 . 0 1 PDQ02N15 150V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=120V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=1A --- 380 480 m VGS=6V , ID=0.5A --- 410 520 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V gfs Forward Transconductance VDS=10V , ID=1A --- 1.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=75V , VGS=10V , ID=1A --- 8.1 16 nC Qgs Gate-Source Charge2 , 3 --- 2 4 Qgd Gate-Drain Charge2 , 3 --- 2.7 5.4 Td(on) Turn-On Delay Time2 , 3 VDD=75V , VGS=10V , RG=10 ID=1A --- 8.2 16 ns Tr Rise Time2 , 3 --- 5.8 12 Td(off) Turn-Off Delay Time2 , 3 --- 14.8 28 Tf Fall Time2 , 3 --- 8 16 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 350 700 pF Coss Output Capacitance --- 34 68 Crss Reverse Transfer Capacitance --- 26 52 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 1.4 A ISM Pulsed Source Current --- --- 2.8 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs TJ=25℃ --- 43 --- ns Qrr Reverse Recovery Charge --- 37 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2 % . 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. V e r . 1 . 0 1 PDQ02N15 150V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.2 Continuous Drain Current vs. T C Fig.1 Continuous Drain Current vs. T C Normalized On Resistance (m) Fig.3 Normalized V th vs. TJ Normalized Gate Threshold V oltage (V) VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area TC , Case Temperature (℃) TC , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. V e r . 1 . 0 1 PDQ02N15 150V N-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. V e r . 1 . 0 1 PDQ02N15 150V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches M A X M I N M A X M I N A 1 . 4 5 0 - 0 . 0 5 7 - A1 0.100 0.000 0.004 0.000 A2 1.300 1.050 0.051 0.041 b 0 . 5 0 0 0 . 3 0 0 0 . 0 2 0 0 . 0 1 2 c 0 . 2 0 0 0 . 1 0 0 0 . 0 0 8 0 . 0 0 4 D 3 . 1 0 0 2 . 7 0 0 0 . 1 2 2 0 . 1 0 6 E 1 . 8 0 0 1 . 4 0 0 0 . 0 7 1 0 . 0 5 5 E1 3.000 2.600 0.118 0.102 e 0 . 9 5 B S C 0 . 0 3 7 B S C e1 2.000 1.800 0.079 0.071 L1 0.600 0.300 0.024 0.012 θ 1 0 ° 0 ° 1 0 ° 0 ° SOT23-6 PACKAGE INFORMATION