PDP8902 POTENS

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Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S G  Networking  Load Switch  LED applications  Quick Charger D S

Potens semiconductor corp. Ver.1.03 PDP8902 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=15A --- 7.2 8.5 m VGS=4.5V , ID=8A --- 9 11 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 2 3 V gfs Forward Transconductance VDS=10V , ID=3A --- 18 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=40V , VGS=10V , ID=10A --- 86 170 nC Qgs Gate-Source Charge3,4 --- 14.5 28 Qgd Gate-Drain Charge3,4 --- 17.5 35 Td(on) Turn-On Delay Time3,4 VDD=40V , VGS=10V , RG=10 ID=10A --- 21.8 42 ns Tr Rise Time3,4 --- 27.8 54 Td(off) Turn-Off Delay Time3,4 --- 111 220 Tf Fall Time3,4 --- 56 112 Ciss Input Capacitance VDS=30V , VGS=0V , F=1MHz --- 5335 10000 pF Coss Output Capacitance --- 350 700 Crss Reverse Transfer Capacitance --- 185 370 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.6 3.2  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 120 A ISM Pulsed Source Current --- --- 240 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=20A , di/dt=100A/µs TJ=25℃ --- 28 --- ns Qrr Reverse Recovery Charge --- 20 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=68A., Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDP8902 80V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response ID , Drain Current (A) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) TJ , Junction Temperature (℃) Qg , Gate Charge (nC)

Potens semiconductor corp. Ver.1.03 PDP8902 80V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.03 PDP8902 80V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.400 9.700 0.409 0.382 A1 8.900 7.400 0.350 0.291 A2 1.400 0.800 0.055 0.031 B 16.500 14.500 0.650 0.571 C 4.750 4.200 0.187 0.165 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 4.000 3.300 0.157 0.130 E1 3.800 3.400 0.150 0.134 G 9.400 8.400 0.370 0.331 H 0.600 0.200 0.024 0.008 H1 6.850 6.200 0.270 0.244 K 2.850 2.100 0.112 0.083 L 14.000 12.500 0.551 0.492 L1 4.000 2.700 0.157 0.106 M 1.750 1.100 0.069 0.043 N 2.640 2.440 0.104 0.096 TO220 PACKAGE INFORMATION