PDP0905 POTENS

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Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics D G S G  Networking  Load Switch  LED applications D S

Potens semiconductor corp. Ver.1.02 PDP0905 100V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- --- --- V/℃ IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-80V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-5A --- 170 210 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1 --- -3 V gfs Forward Transconductance VDS=10V , ID=3A --- 7 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=-80V , VGS=-10V , ID=-5A --- 20 40 nC Qgs Gate-Source Charge3,4 --- 3.5 7 Qgd Gate-Drain Charge3,4 --- 4.6 9 Td(on) Turn-On Delay Time3,4 VDD=-50V , VGS=-10V , RG=25 ID=-5A --- 18 36 ns Tr Rise Time3,4 --- 8 16 Td(off) Turn-Off Delay Time3,4 --- 100 200 Tf Fall Time3,4 --- 30 60 Ciss Input Capacitance VDS=-25V , VGS=0V , F=1MHz --- 1419 2500 pF Coss Output Capacitance --- 89 170 Crss Reverse Transfer Capacitance --- 45 90 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 16 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -10 A ISM Pulsed Source Current --- --- -20 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time2 VGS=0V,IS=-5A , dI/dt=100A/µs TJ=25℃ --- 26.6 --- ns Qrr Reverse Recovery Charge2 --- 24.2 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=-22A.,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDP0905 100V P-Channel MOSFETs -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.02 PDP0905 100V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.02 PDP0905 100V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.400 9.700 0.409 0.382 A1 8.900 7.400 0.350 0.291 A2 1.400 0.800 0.055 0.031 B 16.500 14.500 0.650 0.571 C 4.750 4.200 0.187 0.165 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 4.000 3.300 0.157 0.130 E1 3.800 3.400 0.150 0.134 G 9.400 8.400 0.370 0.331 H 0.600 0.200 0.024 0.008 H1 6.850 6.200 0.270 0.244 K 2.850 2.100 0.112 0.083 L 14.000 12.500 0.551 0.492 L1 4.000 2.700 0.157 0.106 M 1.750 1.100 0.069 0.043 N 2.640 2.440 0.104 0.096 TO220 PACKAGE INFORMATION