PDP0059 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S G  Networking  Load Switch  LED applications  Quick Charger D S

Potens semiconductor corp. Ver.1.00 PDP0059 100V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-80V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-20A --- 16.4 20 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V gfs Forward Transconductance VDS=-10V , IS=-5A --- 24 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-50V , VGS=-10V , ID=-30A --- 200 300 nC Qgs Gate-Source Charge2 , 3 --- 29 44 Qgd Gate-Drain Charge2 , 3 --- 30 45 Td(on) Turn-On Delay Time2 , 3 VDD=-50V , VGS=-10V , RG=6 ID=-30A --- 30 45 ns Tr Rise Time2 , 3 --- 140 210 Td(off) Turn-Off Delay Time2 , 3 --- 120 180 Tf Fall Time2 , 3 --- 75 120 Ciss Input Capacitance VDS=-50V , VGS=0V , F=1MHz --- 12000 18000 pF Coss Output Capacitance --- 320 480 Crss Reverse Transfer Capacitance --- 245 370 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -55 A ISM Pulsed Source Current --- --- -110 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-100V, IS=-10A di/dt=100A/µs, TJ=25℃ --- 90 --- ns Qrr Reverse Recovery Charge --- 160 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-50V,VGS=-10V,L=0.1mH,IAS=-74A.,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDP0059 100V P-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0 2 4 6 8 10 VGS=-2.7V VGS=-3.3V VGS=-3V 0 2 4 6 8 10 Tc=25℃ ID=-20A 5 15 25 35 45 55 Tc=25℃ VGS=-4.5V VGS=-6V VGS=-10V -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold Voltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDP0059 100V P-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 100 1000 10000 0.1 1 10 100 Ciss Coss Crss 0 40 80 120 160 200 ID=-30A VDS=-50V -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics s

Potens semiconductor corp. Ver.1.00 PDP0059 100V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.400 9.700 0.409 0.382 A1 8.900 7.400 0.350 0.291 A2 1.400 0.800 0.055 0.031 B 16.500 14.500 0.650 0.571 C 4.750 4.200 0.187 0.165 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 4.000 3.300 0.157 0.130 E1 3.800 3.400 0.150 0.134 G 9.400 8.400 0.370 0.331 H 0.600 0.200 0.024 0.008 H1 6.850 6.200 0.270 0.244 K 2.850 2.100 0.112 0.083 L 14.000 12.500 0.551 0.492 L1 4.000 2.700 0.157 0.106 M 1.750 1.100 0.069 0.043 N 2.640 2.440 0.104 0.096 TO220 PACKAGE INFORMATION