PDN2317S POTENS

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 Notebook  Load Switch  Hand-Held Instruments D G S D G S

Potens semiconductor corp. V e r . 1 . 0 0 PDN2317S 20V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.6 -1.0 V △VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-10V , VGS=-4.5V , ID=-1A --- 2.5 5 nC Qgs Gate-Source Charge2 , 3 --- 0.36 0.72 Qgd Gate-Drain Charge2 , 3 --- 0.5 1.0 Td(on) Turn-On Delay Time2 , 3 VDD=-10V , VGS=-4.5V , RG=25 ID=-1A --- 2 4 nS Tr Rise Time2 , 3 --- 7.8 15 Td(off) Turn-Off Delay Time2 , 3 --- 16.6 32 Tf Fall Time2 , 3 --- 4.5 9 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 150 300 pF Coss Output Capacitance --- 32 64 Crss Reverse Transfer Capacitance --- 23 46 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -2.5 A ISM Pulsed Source Current --- --- -5 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2 % . 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. V e r . 1 . 0 0 PDN2317S 20V P-Channel MOSFETs -ID , Continuous Drain Current (A) Normalized On Resistance (m) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. T C TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized V th vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RΘJA) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. V e r . 1 . 0 0 PDN2317S 20V P-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. V e r . 1 . 0 0 PDN2317S 20V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.000 0.035 0.039 A1 0.000 0.100 0.000 0.004 b 0.300 0.500 0.012 0.020 c 0.090 0.110 0.003 0.004 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000 0.071 0.079 L 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 1 ˚ 7 ˚ 1 ˚ 7 ˚ SOT23-3S PACKAGE INFORMATION