PDN02N15 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  Networking  Load Switch  LED applications SOT23-3 Pin Configuration D G S D G S

Potens semiconductor corp. Ver.1.00 PDN02N15 150V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=120V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=1A --- 380 480 m VGS=6V , ID=0.5A --- 410 520 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V gfs Forward Transconductance VDS=10V , ID=1A --- 1.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=75V , VGS=10V , ID=1A --- 8.1 16 nC Qgs Gate-Source Charge2 , 3 --- 2 4 Qgd Gate-Drain Charge2 , 3 --- 2.7 5.4 Td(on) Turn-On Delay Time2 , 3 VDD=75V , VGS=10V , RG=10 ID=1A --- 8.2 16 ns Tr Rise Time2 , 3 --- 5.8 12 Td(off) Turn-Off Delay Time2 , 3 --- 14.8 28 Tf Fall Time2 , 3 --- 8 16 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 350 700 pF Coss Output Capacitance --- 34 68 Crss Reverse Transfer Capacitance --- 26 52 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 1.2 A ISM Pulsed Source Current --- --- 2.4 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs TJ=25℃ --- 43 --- ns Qrr Reverse Recovery Charge --- 37 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDN02N15 150V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.2 Continuous Drain Current vs. TC Fig.1 Continuous Drain Current vs. TC Normalized On Resistance Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area TC , Case Temperature (℃) TC , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.00 PDN02N15 150V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.00 PDN02N15 150V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.050 1.450 0.041 0.057 A2 0.900 1.300 0.035 0.051 b 0.300 0.490 0.012 0.019 c 0.100 0.200 0.004 0.008 D 2.820 3.050 0.111 0.120 E 1.500 1.750 0.059 0.069 E1 2.600 3.000 0.102 0.118 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000 0.071 0.079 L 0.700 REF. 0.028 REF. L1 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° SOT23-3 PACKAGE INFORMATION