PDN001N60S POTENS

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Technical content

Features

Applications

 High efficient switched mode power supplies  TV Power  Adapter/charger  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOT23-3S Pin Configuration  Improved dv/dt capability  Fast switching  Green Device Available D G S D G S

Potens semiconductor corp. Ver.1.02 PDN001N60S 600V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 600 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.52 --- V/℃ IDSS Drain-Source Leakage Current VDS=600V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=480V , VGS=0V , TJ=125℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=0.1A --- 90 160  VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.5 2.3 3 V △VGS(th) VGS(th) Temperature Coefficient --- -3.74 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=0.07A --- 0.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2,3 VDS=480V , VGS=10V , ID=0.1A --- 2.4 5 nC Qgs Gate-Source Charge2,3 --- 0.3 1 Qgd Gate-Drain Charge2,3 --- 0.2 1 Td(on) Turn-On Delay Time2,3 VDD=300V , VGS=10V , RG=3.3 ID=0.05A --- 9.2 18 ns Tr Rise Time2,3 --- 12.2 24 Td(off) Turn-Off Delay Time2,3 --- 14.4 28 Tf Fall Time2,3 --- 76.8 150 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 32.8 65 pF Coss Output Capacitance --- 9.7 20 Crss Reverse Transfer Capacitance --- 2 4 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 0.1 A ISM Pulsed Source Current --- --- 0.4 A VSD Diode Forward Voltage VGS=0V , IS=0.1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDN001N60S 600V N-Channel MOSFETs TC , Case Temperature (℃) Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized Gate Threshold V oltage Fig.3 Normalized Vth vs. TJ Normalized Thermal Response Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.02 PDN001N60S 600V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.02 PDN001N60S 600V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.001 0.100 0.000 0.004 b 0.300 0.500 0.012 0.020 c 0.080 0.180 0.003 0.008 D 2.700 3.100 0.106 0.122 E 1.100 1.500 0.043 0.059 E1 2.100 2.640 0.080 0.104 e 0.950 TYP. 0.037 TYP. e1 1.780 2.040 0.070 0.080 L 0.550 REF. 0.022 REF. L1 0.100 0.500 0.004 0.020 θ 1° 10° 1° 10° SOT23-3S PACKAGE INFORMATION