PDJ00D8BH POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  Networking  Load Switch  LED applications  Quick Charger G D S

Potens semiconductor corp. Ver.1.00 PDJ00D8BH 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=20A --- 1.9 2.3 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 2.6 4 V gfs Forward Transconductance VDS=10V , ID=3A --- 21 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=50V , VGS=10V , ID=80A --- 122 185 nC Qgs Gate-Source Charge3 , 4 --- 27 40 Qgd Gate-Drain Charge3 , 4 --- 33 50 Td(on) Turn-On Delay Time3 , 4 VDD=50V , VGS=10V , RG=6 ID=80A --- 20 30 ns Tr Rise Time3 , 4 --- 32 50 Td(off) Turn-Off Delay Time3 , 4 --- 98 150 Tf Fall Time3 , 4 --- 32 50 Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 7700 11550 pF Coss Output Capacitance --- 1500 2250 Crss Reverse Transfer Capacitance --- 30 45 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 220 A ISM Pulsed Source Current --- --- 440 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=100V, IS=10A di/dt=100A/µs , TJ=25℃ --- 250 --- ns Qrr Reverse Recovery Charge --- 820 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=138A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDJ00D8BH 100V N-Channel MOSFETs 5 16 27 38 49 60 Tc=25℃ VGS=6V VGS=8V VGS=10V 2 4 6 8 10 12 Tc=25℃ ID=20A ID=30A 100 150 200 250 25 50 75 100 125 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 1 2 3 4 5 VGS=4V VGS=4.3V VGS=4.5VVGS=4.7V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDJ00D8BH 100V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 26 52 78 104 130 ID=80A VDS=50V 100 1000 10000 0.1 1 10 100 Ciss Coss Crss VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDJ00D8BH 100V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Max Min Max Min A 4.900 4.240 0.193 0.167 A1 2.850 2.300 0.112 0.091 b 0.910 0.700 0.036 0.028 b1 1.750 1.070 0.069 0.042 b2 1.700 1.070 0.067 0.042 C 0.600 0.280 0.024 0.011 C1 1.400 1.150 0.055 0.045 D 9.020 8.450 0.355 0.333 E 10.40 9.960 0.409 0.392 e 2.540 BSC 0.100 BSC L 14.20 13.47 0.559 0.530 L1 4.000 3.550 0.157 0.140 L2 1.360 REF. 0.054 REF. TO262 PACKAGE INFORMATION E D L b C A e