PDH6901 POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25 ℃℃ ℃℃ unless otherwise noted Thermal Characteristics TO263 Pin Configuration D G S G S D

Potens semiconductor corp. Ver.1.00 PDH6901 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage VGS =0V , I D=-250uA -60 --- --- V △ BV DSS /△ TJ BV DSS Temperature Coefficient Reference to 25 ℃ , I D=1mA --- 0.036 --- V/ ℃ IDSS Drain-Source Leakage Current VDS =-60V , V GS =0V , T J=25 ℃ --- --- -1 uA VDS =-48V , V GS =0V , T J=125 ℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS = ± 20V , V DS =0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS =-10V , I D=-20A --- 7.6 9.2 mΩ VGS =-4.5V , I D=-10A --- 9.3 12 mΩ VGS(th) Gate Threshold Voltage VGS =V DS , I D =-250uA -1.2 -1.6 -2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -6.3 --- mV/℃ gfs Forward Transconductance VDS =-10V , I D=-3A --- 18 --- S Dynamic and switching Characteristics Qg Total Gate Charge 3,4 VDS =-30V , V GS =-10V , I D=-5A --- 138 210 nC Qgs Gate-Source Charge 3,4 --- 25.4 38 Qgd Gate-Drain Charge 3,4 --- 12.8 19 Td(on) Turn-On Delay Time 3,4 VDD =-48V , V GS =-10V , R G=6Ω ID=-1A --- 70 140 ns Tr Rise Time 3,4 --- 205 410 Td(off) Turn-Off Delay Time 3,4 --- 402 804 Tf Fall Time 3,4 --- 197 394 Ciss Input Capacitance VDS =-25V , V GS =0V , F=1MHz --- 8620 12930 pF Coss Output Capacitance --- 486 730 Crss Reverse Transfer Capacitance --- 288 430 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=V D=0V , Force Current --- --- -75 A ISM Pulsed Source Current --- --- -150 A VSD Diode Forward Voltage VGS =0V , I S=1A , T J=25 ℃ --- --- -1 V trr Reverse Recovery Time V GS =10V,I S=10A , di/dt=100A/µs TJ=25 ℃ --- 370 --- ns Qrr Reverse Recovery Charge --- 1740 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maxi mum junction temperature. 2. V DD =50V,V GS =10V,L=0.1mH,I AS =80A.,R G=25 Ω , Starting T J=25 ℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature . Electrical Characteristics (T J=25 ℃ , unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDH6901 60V P-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. T C Fig.2 Normalized RDSON vs. T J Normalized On Resistance (mΩ ) Fig. 3 Normalized Vth vs. T J Normalized Gate Threshold V oltage (V) Fig. 4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response (R θJC ) ID , Drain Current (A) TC , Case Temperature ( ℃ ) TJ , Junction Temperature ( ℃ ) TJ , Junction Temperature ( ℃ ) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V )

Potens semiconductor corp. Ver.1.00 PDH6901 60V P-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.00 PDH6901 60V P-Channel MOSFETs TO263 PACKAGE INFORMATION