PDH65N15BH POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  Networking  Load Switch  LED applications  Quick Charger D S G

Potens semiconductor corp. Ver.2.00 PDH65N15BH 150V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=120V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=25A --- 13 16 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 3.5 4.5 V gfs Forward Transconductance VDS=10V , ID=3A --- 13 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=75V , VGS=10V , ID=30A --- 47 75 nC Qgs Gate-Source Charge3 , 4 --- 8 15 Qgd Gate-Drain Charge3 , 4 --- 17 25 Td(on) Turn-On Delay Time3 , 4 VDD=75V , VGS=10V , RG=6 ID=30A --- 15 25 ns Tr Rise Time3 , 4 --- 28 40 Td(off) Turn-Off Delay Time3 , 4 --- 45 70 Tf Fall Time3 , 4 --- 32 50 Ciss Input Capacitance VDS=75V , VGS=0V , F=1MHz --- 2430 3650 pF Coss Output Capacitance --- 207 310 Crss Reverse Transfer Capacitance --- 14 25 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHz --- 1.5 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 65 A ISM Pulsed Source Current --- --- 130 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 VR=100V, IS=10A di/dt=100A/µs , TJ=25℃ --- 75 --- ns Qrr Reverse Recovery Charge3 --- 230 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=1mH,IAS=27A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.2.00 PDH65N15BH 150V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 10 VGS=5V VGS=5.3V VGS=5.5V VGS=5.7V VGS=6V 4 5 6 7 8 9 10 Tc=25℃ ID=15A ID=25A 5 11 17 23 29 35 Tc=25℃ VGS=8V VGS=10V 25 50 75 100 125 150 ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold Voltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.2.00 PDH65N15BH 150V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

0.1 1 10 100 Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 0 10 20 30 40 50 ID=30A VDS=75V VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.2.00 PDH65N15BH 150V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.200 0.191 0.165 A1 0.300 0.000 0.012 0.000 A2 2.900 2.200 0.114 0.087 b 0.950 0.700 0.037 0.028 b2 1.700 1.000 0.067 0.039 c 1.450 1.150 0.057 0.045 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 6.850 0.350 0.270 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 1.700 0.110 0.067 L1 1.700 1.050 0.067 0.041 L2 2.100 1.300 0.083 0.051 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.008 TO263 PACKAGE INFORMATION