PDH6001 POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  POL Applications  Load Switch  LED Application D S G

Potens semiconductor corp. Ver.1.03 PDH6001 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.036 --- V/℃ IDSS Drain-Source Leakage Current VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-50A --- 3.8 4.6 m VGS=-4.5V , ID=-25A --- 5 6 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -6.3 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 18 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-48V , VGS=-10V , ID=-5A --- 280 420 nC Qgs Gate-Source Charge3 , 4 --- 30 50 Qgd Gate-Drain Charge3 , 4 --- 60 90 Td(on) Turn-On Delay Time3 , 4 VDD=-48V , VGS=-10V , RG=6 ID=-1A --- 87.5 131 ns Tr Rise Time3 , 4 --- 256 380 Td(off) Turn-Off Delay Time3 , 4 --- 503 750 Tf Fall Time3 , 4 --- 245 368 Ciss Input Capacitance VDS=-25V , VGS=0V , F=1MHz --- 16000 24000 pF Coss Output Capacitance --- 920 1400 Crss Reverse Transfer Capacitance --- 760 1150 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -140 A ISM Pulsed Source Current --- --- -280 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 VR=-50V, IS=-10A dI/dt=100A/µs, TJ=25℃ --- 75 --- ns Qrr Reverse Recovery Charge3 --- 110 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-120A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDH6001 60V P-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 10 VGS=-2.5V VGS=-2.7V VGS=-3V VGS=-3.3V VGS=-3.5V 0 2 4 6 8 10 Tc=25℃ ID=-25A ID=-50A 5 25 45 65 85 105 Tc=25℃ VGS=-4.5V VGS=-6V VGS=-10V 100 120 140 25 50 75 100 125 150 -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteris tics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.03 PDH6001 60V P-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics -VGS -10V / -4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 60 120 180 240 300 ID=-5A VDS=-48V 100 1000 10000 0.1 1 10 Ciss Coss Crss 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.03 PDH6001 60V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.200 0.191 0.165 A1 0.300 0.000 0.012 0.000 A2 2.900 2.200 0.114 0.087 b 0.950 0.700 0.037 0.028 b2 1.700 1.000 0.067 0.039 c 1.450 1.150 0.057 0.045 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 6.850 0.350 0.270 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 1.700 0.110 0.067 L1 1.700 1.050 0.067 0.041 L2 2.100 1.300 0.083 0.051 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.008 TO263 PACKAGE INFORMATION