PDH49K0BH POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

D G S  Motor Drive  Power Tools  LED Lighting  Quick Charger D S G

Potens semiconductor corp. Ver.1.00 PDH49K0BH 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250μA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 μA VDS=32V , VGS=0V , TJ=100℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=25A --- 3.2 3.9 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 2 3 4 V Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=10V , ID=60A --- 30 45 nC Qgs Gate-Source Charge3 , 4 --- 5.5 10 Qgd Gate-Drain Charge3 , 4 --- 9.5 15 Td(on) Turn-On Delay Time3 , 4 VDD=20V , VGS=10V , RG=6 ID=60A --- 10 15 ns Tr Rise Time3 , 4 --- 10 15 Td(off) Turn-Off Delay Time3 , 4 --- 28 45 Tf Fall Time3 , 4 --- 16 25 Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 1700 2500 pF Coss Output Capacitance --- 750 1200 Crss Reverse Transfer Capacitance --- 55 85 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.45 ---  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=38A 72.2 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 125 A ISM Pulsed Source Current --- --- 250 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/μs TJ=25℃ --- 55 --- ns Qrr Reverse Recovery Charge --- 60 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=58A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.00 PDH49K0BH 40V N-Channel MOSFETs 0 2 4 6 8 VGS=5V VGS=5.3V VGS=5.5V VGS=5.7V VGS=10V VGS=6V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 100 125 25 50 75 100 125 150 2 4 6 8 10 Tc=25℃ ID=25A 5 15 25 35 45 55 Tc=25℃ VGS=10V VGS=8V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDH49K0BH 40V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 0.1 1 10 Ciss Coss Crss VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 6 12 18 24 30 ID=60A VDS=20V 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100μs 10μs 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDH49K0BH 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.200 0.191 0.165 A1 0.300 0.000 0.012 0.000 A2 2.900 2.200 0.114 0.087 b 0.950 0.700 0.037 0.028 b2 1.700 1.000 0.067 0.039 c 1.450 1.150 0.057 0.045 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 6.850 0.350 0.270 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 1.700 0.110 0.067 L1 1.700 1.050 0.067 0.041 L2 2.100 1.300 0.083 0.051 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.008 TO263 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDH49K0BH 40V N-Channel MOSFETs TO263 RECOMMENDED LAND PATTERN unit : mm