PDH4960 POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  MB / VGA / Vcore  POL Applications  SMPS 2nd SR D S G

Potens semiconductor corp. Ver.1.01 PDH4960 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=25A --- 3.1 3.8 m VGS=4.5V , ID=12A --- 4.0 5.0 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=2A --- 16 --- S Qg Total Gate Charge3,4 VDS=20V , VGS=4.5V , ID=10A --- 44.4 80 nC Qgs Gate-Source Charge3,4 --- 9.6 18 Qgd Gate-Drain Charge3,4 --- 16 30 Td(on) Turn-On Delay Time3,4 VDD=20V , VGS=10V , RG=6 ID=1A --- 28 50 ns Tr Rise Time3,4 --- 3.2 6.5 Td(off) Turn-Off Delay Time3,4 --- 89 160 Tf Fall Time3,4 --- 14 28 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 4940 7800 pF Coss Output Capacitance --- 425 800 Crss Reverse Transfer Capacitance --- 170 330 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.4 2.8  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 150 A ISM Pulsed Source Current3 --- --- 300 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/µs, TJ=25℃ --- 60 --- ns Qrr Reverse Recovery Charge --- 70 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=79A., Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics Dynamic Characteristics On Characteristics

Potens semiconductor corp. Ver.1.01 PDH4960 40V N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.01 PDH4960 40V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.01 PDH4960 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.250 0.191 0.167 A1 0.250 0.000 0.001 0.000 A2 2.900 2.350 0.114 0.093 b 0.950 0.700 0.037 0.028 b2 1.600 1.000 0.063 0.039 c 1.450 1.200 0.057 0.047 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 7.500 0.350 0.295 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 2.000 0.110 0.079 L1 1.700 1.150 0.067 0.045 L2 2.100 1.400 0.083 0.055 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.001 TO263 PACKAGE INFORMATION