PDH3901 POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics

Applications

S D G  MB / VGA / Server Vcore  POL Applications  SMPS 2nd SR  BMS System D G S

Potens semiconductor corp. Ver.1.00 PDH3901 30V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V IDSS Drain-Source Leakage Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-30A --- 3.2 3.8 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V gfs Forward Transconductance VDS=-10V , IS=-3A --- 20 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-15V , VGS=-10V , ID=-80A --- 150 250 nC Qgs Gate-Source Charge2 , 3 --- 24 40 Qgd Gate-Drain Charge2 , 3 --- 28 45 Td(on) Turn-On Delay Time2 , 3 VDD=-15V , VGS=-10V , RG=6 ID=-80A --- 25 40 ns Tr Rise Time2 , 3 --- 35 55 Td(off) Turn-Off Delay Time2 , 3 --- 100 150 Tf Fall Time2 , 3 --- 50 80 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 7500 12000 pF Coss Output Capacitance --- 1200 1800 Crss Reverse Transfer Capacitance --- 940 1400 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 3.5 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -165 A ISM Pulsed Source Current --- --- -330 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-30V, IS=-10A di/dt=100A/µs, TJ=25℃ --- 210 --- ns Qrr Reverse Recovery Charge --- 580 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-68A.,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDH3901 30V P-Channel MOSFETs 112 140 0 1.2 2.4 3.6 4.8 6 VGS=-3V VGS=-2.7V VGS=-3.3VVGS=-4.5V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 132 165 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=-20A ID=-30A 1.5 2.5 3.5 4.5 5.5 5 18 31 44 57 70 Tc=25℃ VGS=-4.5V VGS=-6V VGS=-10V -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDH3901 30V P-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 30 60 90 120 150 ID=-80A VDS=-15V 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 100 1000 10000 0.1 1 10 Ciss Coss Crss -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDH3901 30V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.250 0.191 0.167 A1 0.250 0.000 0.001 0.000 A2 2.900 2.350 0.114 0.093 b 0.950 0.700 0.037 0.028 b2 1.600 1.000 0.063 0.039 c 1.450 1.200 0.057 0.047 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 7.500 0.350 0.295 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 2.000 0.110 0.079 L1 1.700 1.150 0.067 0.045 L2 2.100 1.400 0.083 0.055 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.001 TO263 PACKAGE INFORMATION