PDH3060 POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  Networking  Load Switch  LED applications  Quick Charger D S G

Potens semiconductor corp. Ver.1.01 PDH3060 30V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=50A --- 1 1.3 m VGS=4.5V , ID=25A --- 1.2 1.7 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=2A --- 20 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=10V , ID=30A --- 167 330 nC Qgs Gate-Source Charge3 , 4 --- 25 50 Qgd Gate-Drain Charge3 , 4 --- 31 62 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=1 ID=1A --- 40 80 ns Tr Rise Time3 , 4 --- 64 128 Td(off) Turn-Off Delay Time3 , 4 --- 150 300 Tf Fall Time3 , 4 --- 56 112 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 10600 21200 pF Coss Output Capacitance --- 1500 3000 Crss Reverse Transfer Capacitance --- 570 1140 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 270 A ISM Pulsed Source Current --- --- 540 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 IS=30A , dI/dt=100A/µs TJ=25℃ --- 146 --- ns Qrr Reverse Recovery Charge3 --- 320 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=138A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDH3060 30V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) ID, Drain Current (A) VDS ,Drain to Source V oltage (V) Fig.5 Typical Output Characteristics RDS(ON) , Turn-On Resistance (mohm) ID , Drain Current (A) Fig.6 Turn-On Resistance vs. ID

Potens semiconductor corp. Ver.1.01 PDH3060 30V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.10 Switching Time Waveform Fig.8 Normalized Transient Impedance Fig.9 Maximum Safe Operation Area Fig.11 Gate Charge Waveform Normalized Thermal Response ID , Drain Current (A) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s) Capacitance (pF) VDS , Drain to Source V oltage (V) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.01 PDH3060 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.200 0.191 0.165 A1 0.300 0.000 0.012 0.000 A2 2.900 2.200 0.114 0.087 b 0.950 0.700 0.037 0.028 b2 1.700 1.000 0.067 0.039 c 1.450 1.150 0.057 0.045 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 6.850 0.350 0.270 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 1.700 0.110 0.067 L1 1.700 1.050 0.067 0.041 L2 2.100 1.300 0.083 0.051 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.008 TO263 PACKAGE INFORMATION