PDH130ND15BH POTENS

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Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  Networking  Load Switch  LED applications  Quick Charger D S G

Potens semiconductor corp. Ver.2.00 PDH130ND15BH 150V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 150 --- --- V IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=120V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=25A --- 6 7.2 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 2.5 3.5 4.5 V gfs Forward Transconductance VDS=10V , ID=3A --- 13 --- S Dynamic and switching Characteristics3 Qg Total Gate Charge VDS=75V , VGS=10V , ID=60A --- 89 135 nC Qgs Gate-Source Charge --- 15 25 Qgd Gate-Drain Charge --- 29 45 Td(on) Turn-On Delay Time VDD=75V , VGS=10V , RG=6 ID=60A --- 18 32 ns Tr Rise Time --- 30 55 Td(off) Turn-Off Delay Time --- 25 45 Tf Fall Time --- 35 65 Ciss Input Capacitance VDS=75V , VGS=0V , F=1MHz --- 4550 6800 pF Coss Output Capacitance --- 425 640 Crss Reverse Transfer Capacitance --- 23 35 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHz --- 0.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 130 A ISM Pulsed Source Current --- --- 260 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=100V, IS=10A di/dt=100A/µs , TJ=25℃ --- 90 --- ns Qrr Reverse Recovery Charge --- 340 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=1mH,IAS=40A.,RG=25,Starting TJ=25℃. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.2.00 PDH130ND15BH 150V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 100 120 0 2 4 6 8 10 VGS=4.7V VGS=5V VGS=5.3V VGS=5.5V VGS=5.7V VGS=6V VGS=10V 100 120 140 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=25A 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 25 45 65 85 Tc=25℃ VGS=8V VGS=10V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.2.00 PDH130ND15BH 150V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

0.1 1 10 100 Ciss Coss Crss 0 20 40 60 80 100 ID=60A VDS=75V 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.2.00 PDH130ND15BH 150V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 4.850 4.200 0.191 0.165 A1 0.300 0.000 0.012 0.000 A2 2.900 2.200 0.114 0.087 b 0.950 0.700 0.037 0.028 b2 1.700 1.000 0.067 0.039 c 1.450 1.150 0.057 0.045 D 9.500 8.350 0.374 0.329 D1 9.150 6.400 0.360 0.252 E 10.500 9.600 0.413 0.378 E1 8.900 6.850 0.350 0.270 e 2.540 BSC 0.100 BSC H 15.900 14.600 0.626 0.575 L 2.800 1.700 0.110 0.067 L1 1.700 1.050 0.067 0.041 L2 2.100 1.300 0.083 0.051 L3 0.250 BSC 0.010 BSC L4 0.750 0.200 0.030 0.008 TO263 PACKAGE INFORMATION