PDH0974 POTENS

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Technical content

Features

Applications

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO263 Pin Configuration D G S G  Networking  Load Switch  LED applications  Quick Charger D S

Potens semiconductor corp. Ver.1.01 PDH0974 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 5.5 6.5 m VGS=5V , ID=10A ‘--- 7 9 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V gfs Forward Transconductance VDS=10V , ID=5A --- 8 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=80V , VGS=10V , ID=10A --- 58.2 100 nC Qgs Gate-Source Charge3 , 4 --- 9.2 18 Qgd Gate-Drain Charge3 , 4 --- 20.8 30 Td(on) Turn-On Delay Time3 , 4 VDD=50V , VGS=10V , RG=6 ID=1A --- 24 48 ns Tr Rise Time3 , 4 --- 19.8 39 Td(off) Turn-Off Delay Time3 , 4 --- 46 92 Tf Fall Time3 , 4 --- 26 52 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 4570 9100 pF Coss Output Capacitance --- 1180 2300 Crss Reverse Transfer Capacitance --- 49 98 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 100 A ISM Pulsed Source Current --- --- 200 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=80A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDH0974 100V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance (m) Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage (V) Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response (RθJC) ID , Drain Current (A) TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s)

Potens semiconductor corp. Ver.1.01 PDH0974 100V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.01 PDH0974 100V N-Channel MOSFETs TO263 PACKAGE INFORMATION