PDH030C120W-V POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  SMPS  Solar Inverters  Renewable energy  EV battery chargers D G S G D DS S S S S S (Driver Source)

Potens semiconductor corp. Ver.1.00 PDH030C120W-V 1200V Silicon Carbide Power MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=100µA 1200 --- --- V IDSS Drain-Source Leakage Current VDS=1200V , VGS=0V , TJ=25℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=22V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=18V , ID=40A --- 30 39 m RDS(ON) Static Drain-Source On-Resistance VGS=15V , ID=40A --- 40 --- m VGS(th) Gate Threshold Voltage VGS=VDS , ID =4mA 1.7 2.3 2.8 V Dynamic and switching Characteristics Qg Total Gate Charge VDS=800V , VGS=-5/18V , IDS=40A --- 115 --- nC Qgs Gate-Source Charge --- 24 --- Qgd Gate-Drain Charge --- 25 --- Td(on) Turn-On Delay Time VDD=800V , VGS=-5/18V , RG=6 , IDS=40A --- 25 --- ns Tr Rise Time --- 15 --- Td(off) Turn-Off Delay Time --- 40 --- Tf Fall Time --- 15 --- Ciss Input Capacitance VDS=1000V , VGS=0V , F=500kHz , VAC=25mV --- 2600 --- pF Coss Output Capacitance --- 135 --- Crss Reverse Transfer Capacitance --- 6 --- Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.5 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 57 A VSD Diode Forward Voltage VGS=-5V , IS=40A , TJ=25℃ --- 4.1 --- V trr Reverse Recovery Time VR=400V, IS=40A di/dt=300A/µs, TJ=25℃ --- 50 --- ns Qrr Reverse Recovery Charge --- 130 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDH030C120W-V 1200V Silicon Carbide Power MOSFETs 0 2 4 6 8 10 VGS=7V TJ=25°C VGS=9V VGS=10V VGS=18V VGS=14V VGS=13V VGS=12V VGS=11V 0 30 60 90 120 ID=40A VDS=800V 0.5 1.5 2.5 25 50 75 100 125 150 175 VGS=18V IDS=40A 0.4 0.6 0.8 1.2 1.4 25 50 75 100 125 150 175 VGS=VDS IDS=4mA 5 15 25 35 45 55 65 VGS=18V TJ=25℃ VGS=15V -100 -80 -60 -40 -20 VGS=-5V VGS=0V VGS=5V VGS=10V VGS=15V VGS=20V TJ=25℃ ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.2 Gate Charge Characteristics Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. ID Fig.6 3rd Quadrant Characteristic ID , Continuous Drain Current (A) VDS ,Drain to Source Voltage (V) ID , Drain Current (A) VDS ,Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.00 PDH030C120W-V 1200V Silicon Carbide Power MOSFETs Fig.8 Capacitance Characteristics Fig.10 Power Dissipation Derating vs. TC 1.00 10.00 100.00 1000.00 0 50 100 150 200 Ciss Coss Crss 1.00 10.00 100.00 1000.00 0 200 400 600 800 1000 1200 Ciss Coss Crss -50 -25 0 25 50 75 100 125 150 175 140 210 280 350 -50 -25 0 25 50 75 100 125 150 175 VDS , Drain to Source V oltage (V) VDS , Drain to Source V oltage (V) Capacitance (pF) (mohm) Capacitance (pF) Fig.7 Capacitance Characteristics TC , Case Temperature (℃) TC , Case Temperature (℃) PD , Power Dissipation (W) (mohm) ID , Continuous Drain Current (A) Fig.9 Continuous Drain Current vs. TC

Potens semiconductor corp. Ver.1.00 PDH030C120W-V 1200V Silicon Carbide Power MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Max Min Max Min A 4.500 4.300 0.177 0.169 b 0.700 0.500 0.028 0.020 c 0.600 0.450 0.024 0.018 c2 1.400 1.200 0.055 0.047 D 9.230 8.930 0.363 0.352 D1 4.950 4.650 0.195 0.183 E 10.28 10.08 0.405 0.397 E1 7.620 6.820 0.300 0.269 e 1.270 BSC 0.050 BSC H 16.00 15.00 0.630 0.591 L 2.500 1.900 0.098 0.075 L1 1.400 1.000 0.055 0.039 Q 2.750 2.450 0.108 0.096 TO263-7L PACKAGE INFORMATION E A D H e c L Q 7xb