PDG012C120J POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics Applications T2PAK Pin Configuration D G S  SMPS  Solar Inverters  Renewable energy  EV battery chargers G(PIN1) D S(PIN2-7)

Potens semiconductor corp. Ver.1.00 PDG012C120J 1200V Silicon Carbide Power MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=100µA 1200 --- --- V IDSS Drain-Source Leakage Current VDS=1200V , VGS=0V , TJ=25℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=22V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=18V , ID=20A --- 12.5 16.5 m RDS(ON) Static Drain-Source On-Resistance VGS=18V , ID=50A --- 14.5 18.5 m RDS(ON) Static Drain-Source On-Resistance VGS=15V , ID=50A --- 17 --- m VGS(th) Gate Threshold Voltage VGS=VDS , ID =28mA 1.8 2.6 4.0 V Dynamic and switching Characteristics Qg Total Gate Charge VDS=800V , VGS=-5/18V , IDS=100A --- 260 --- nC Qgs Gate-Source Charge --- 52.5 --- Qgd Gate-Drain Charge --- 48 --- Td(on) Turn-On Delay Time VDD=800V , VGS=-5/18V , RG=6 , IDS=100A --- 20 --- ns Tr Rise Time --- 30 --- Td(off) Turn-Off Delay Time --- 50 --- Tf Fall Time --- 20 --- Ciss Input Capacitance VDS=1000V , VGS=0V , F=100kHz , VAC=25mV --- 5980 --- pF Coss Output Capacitance --- 260 --- Crss Reverse Transfer Capacitance --- 12 --- Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.65 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 120 A VSD Diode Forward Voltage VGS=-5V , IS=50A , TJ=25℃ --- 4.1 --- V trr Reverse Recovery Time VR=400V, IS=50A di/dt=300A/µs, TJ=25℃ --- 65 --- ns Qrr Reverse Recovery Charge --- 220 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDG012C120J 1200V Silicon Carbide Power MOSFETs 120 160 200 0 2 4 6 8 10 VGS=7V TJ=25°C VGS=10V VGS=12V VGS=9V VGS=8V VGS=18V 0 52 104 156 208 260 ID=100A VDS=800V 0.5 1.5 2.5 25 50 75 100 125 150 175 VGS=18V IDS=50A 0.4 0.6 0.8 1.2 1.4 25 50 75 100 125 150 175 VGS=VDS IDS=28mA 5 35 65 95 125 155 VGS=18V TJ=25℃ VGS=15V -100 -80 -60 -40 -20 -5 -4 -3 -2 -1 0 VGS=-5V VGS=0V VGS=5V VGS=10V VGS=15V VGS=20V TJ=25℃ ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.2 Gate Charge Characteristics Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. ID Fig.6 3rd Quadrant Characteristic ID , Continuous Drain Current (A) VDS ,Drain to Source V oltage (V) ID , Drain Current (A) VDS ,Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.00 PDG012C120J 1200V Silicon Carbide Power MOSFETs Fig.8 Capacitance Characteristics Fig.10 Power Dissipation Derating vs. TC 1.00 10.00 100.00 1000.00 10000.00 0 50 100 150 200 Ciss Coss Crss 1.00 10.00 100.00 1000.00 10000.00 0 200 400 600 800 1000 1200 Ciss Coss Crss 100 125 -50 -25 0 25 50 75 100 125 150 175 130 260 390 520 650 -50 -25 0 25 50 75 100 125 150 175 VDS , Drain to Source V oltage (V) VDS , Drain to Source V oltage (V) Capacitance (pF) (mohm) Capacitance (pF) Fig.7 Capacitance Characteristics TC , Case Temperature (℃) TC , Case Temperature (℃) PD , Power Dissipation (W) (mohm) ID , Continuous Drain Current (A) Fig.9 Continuous Drain Current vs. TC

Potens semiconductor corp. Ver.1.00 PDG012C120J 1200V Silicon Carbide Power MOSFETs E H D e A L c E2 b3 7xb Symbol Dimensions In Millimeters Symbol Dimensions In Millimeters MIN MAX MIN MAX A 3.40 3.60 E 13.90 14.10 A1 0.00 0.25 E1 12.30 12.50 b 0.50 0.70 E2 7.75 7.85 b3 0.80 1.00 e 1.27BSC c 0.40 0.60 H 18.00 19.00 c2 0.40 0.60 L 2.30 2.75 D 11.70 12.00 L1 3.05NOM D1 8.80 9.10 L5 1.70 2.15 T2PAK PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDG012C120J 1200V Silicon Carbide Power MOSFETs 2.45 1.50 14.70 19.00 0.901.27 3.00 T2PAK RECOMMENDED LAND PATTERN