PDEV3520Z POTENS

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 Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOT363 Dual Pin Configuration S2 G2 D1 D2 G1 S1 G1 G2

Potens semiconductor corp. Ver.1.01 PDEV3520Z 30V Dual N Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- -0.01 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±20 uA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=0.3A --- 370 450 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.7 1.2 V △VGS(th) VGS(th) Temperature Coefficient --- -1.74 --- mV/℃ gfs Forward Transconductance VDS=4V , ID=0.3A --- 0.8 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=15V , VGS=4.5V , ID=0.3A --- 2.6 5.2 nC Qgs Gate-Source Charge2 , 3 --- 0.9 1.8 Qgd Gate-Drain Charge2 , 3 --- 0.6 1.2 Td(on) Turn-On Delay Time2 , 3 VDD=15V , VGS=4.5V , RG=10 ID=0.3A --- 5.5 11 ns Tr Rise Time2 , 3 --- 4 8 Td(off) Turn-Off Delay Time2 , 3 --- 14.5 29 Tf Fall Time2 , 3 --- 6.5 13 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 72.9 18.3 146 pF Coss Output Capacitance --- 18.3 36.6 Crss Reverse Transfer Capacitance --- 7.4 14.8 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 0.8 A ISM Pulsed Source Current --- --- 1.6 A VSD Diode Forward Voltage VGS=0V , IS=0.3A , TJ=25℃ --- --- 1 V Electrical Characteristics (TJ=25 ℃, unless otherwise) noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.01 PDEV3520Z 30V Dual N Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.01 PDEV3520Z 30V Dual N Channel MOSFETs ID, Drain Current (A) VDS ,Drain to Source V oltage (V) Fig.7 Typical Output Characteristics RDS(ON) , Turn-On Resistance (mohm) ID , Drain Current (A) Fig.8 Turn-On Resistance vs. ID

Potens semiconductor corp. Ver.1.01 PDEV3520Z 30V Dual N Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 A1 0.100 0.000 0.004 0.000 A2 1.000 0.800 0.039 0.031 b 0.330 0.100 0.013 0.004 c 0.250 0.100 0.010 0.004 D 2.200 1.800 0.087 0.071 E 1.350 1.150 0.053 0.045 E1 2.400 1.800 0.094 0.071 e 0.65BSC 0.026BSC L1 0.350 0.100 0.014 0.004 SOT363 Dual PACKAGE INFORMATION