PDEU3619W POTENS

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Potens semiconductor corp. Ver.1.00 PDEU3619W 30V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V IDSS Drain-Source Leakage Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±25 uA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-0.2A --- 780 1100 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 -0.75 -1.2 V Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-15V , VGS=-4.5V , ID=-0.3A --- 3.12 6.2 nC Qgs Gate-Source Charge2 , 3 --- 1.3 2.6 Qgd Gate-Drain Charge2 , 3 --- 0.5 1 Td(on) Turn-On Delay Time2 , 3 VDD=-15V , VGS=-4.5V , RG=6 ID=-0.3A --- 7.4 15 ns Tr Rise Time2 , 3 --- 21.5 43 Td(off) Turn-Off Delay Time2 , 3 --- 46.9 92 Tf Fall Time2 , 3 --- 14.4 29 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 73.4 146 pF Coss Output Capacitance --- 19.1 38 Crss Reverse Transfer Capacitance --- 12.1 25 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -400 mA ISM Pulsed Source Current --- --- -800 mA VSD Diode Forward Voltage VGS=0V , IS=-0.3A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDEU3619W 30V P-Channel MOSFETs Fig.6 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.9 1.8 2.7 3.6 4.5 ID=-0.3A VDS=-15V 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 0.001 0.01 0.1 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms -ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) Normalized Thermal Response -ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.00 PDEU3619W 30V P-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform -VGS -10V / -4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%

Potens semiconductor corp. Ver.1.00 PDEU3619W 30V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.500 0.350 0.020 0.013 D 0.650 0.550 0.026 0.021 E 1.050 0.950 0.041 0.037 e 0.350 BSC 0.014 BSC e1 0.650 BSC 0.026 BSC b 0.200 0.100 0.008 0.004 b1 0.550 0.450 0.022 0.018 L 0.300 0.200 0.012 0.008 L1 0.300 0.200 0.012 0.008 SOT883 PACKAGE INFORMATION