PDEN2423S POTENS

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Potens semiconductor corp. Ver.1.02 PDEN2423S 20V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±10 uA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-4A --- 28 33 m VGS=-2.5V , ID=-3A --- 37 45 VGS=-1.8V , ID=-2A --- 49 65 VGS=-1.5V , ID=-2A --- 56 80 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.6 -1 V △VGS(th) VGS(th) Temperature Coefficient --- 2 --- mV/℃ gfs Forward Transconductance VDS=-10V , IS=-3A --- 8.4 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-10V , VGS=-4.5V , ID=-4A --- 16.1 25 nC Qgs Gate-Source Charge2 , 3 --- 1.8 3 Qgd Gate-Drain Charge2 , 3 --- 3.8 7 Td(on) Turn-On Delay Time2 , 3 VDD=-10V , VGS=-4.5V , RG=25 ID=-1A --- 8.2 16 nS Tr Rise Time2 , 3 --- 30 57 Td(off) Turn-Off Delay Time2 , 3 --- 71.1 135 Tf Fall Time2 , 3 --- 19.8 38 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 1440 2100 pF Coss Output Capacitance --- 155 230 Crss Reverse Transfer Capacitance --- 115 170 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -5.8 A ISM Pulsed Source Current --- --- -23.2 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDEN2423S 20V P-Channel MOSFETs -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area -VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.02 PDEN2423S 20V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.02 PDEN2423S 20V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.001 0.100 0.000 0.004 b 0.300 0.500 0.012 0.020 c 0.080 0.180 0.003 0.008 D 2.700 3.100 0.106 0.122 E 1.100 1.500 0.043 0.059 E1 2.100 2.640 0.080 0.104 e 0.950 TYP. 0.037 TYP. e1 1.780 2.040 0.070 0.080 L 0.550 REF. 0.022 REF. L1 0.100 0.500 0.004 0.020 θ 1° 10° 1° 10° SOT23-3S PACKAGE INFORMATION