PDEC3906Z POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

D G S  MB / VGA / Vcore  POL Applications  SMPS 2nd SR D D D S S D S G

Potens semiconductor corp. Ver.1.01 PDEC3906Z 30V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±10 uA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=20A --- 4.5 5.5 m VGS=4.5V , ID=10A --- 6 7.8 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=10A --- 15 --- S Qg Total Gate Charge3 , 4 VDS=15V , VGS=4.5V , ID=20A --- 11 18 nC Qgs Gate-Source Charge3 , 4 --- 2.6 4.3 Qgd Gate-Drain Charge3 , 4 --- 4.9 7.9 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=3.3 ID=15A --- 7.5 14 ns Tr Rise Time3 , 4 --- 14.5 28 Td(off) Turn-Off Delay Time3 , 4 --- 35.2 67 Tf Fall Time3 , 4 --- 9.6 18 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 1210 1800 pF Coss Output Capacitance --- 190 280 Crss Reverse Transfer Capacitance --- 100 150 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.5 5  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 60 A ISM Pulsed Source Current3 --- --- 120 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/µs, TJ=25℃ --- 80 --- ns Qrr Reverse Recovery Charge --- 265 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics Dynamic and switching Characteristics

Potens semiconductor corp. Ver.1.01 PDEC3906Z 30V N-Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.01 PDEC3906Z 30V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.01 PDEC3906Z 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 b 0.350 0.250 0.014 0.010 c 0.250 0.100 0.010 0.004 D 3.500 3.050 0.138 0.120 D1 3.200 2.900 0.126 0.114 D2 1.950 1.350 0.077 0.053 E 3.400 3.000 0.134 0.118 E1 3.300 2.900 0.130 0.114 E2 2.600 2.350 0.102 0.093 e 0.65BSC 0.026BSC H 0.750 0.300 0.030 0.012 L 0.600 0.300 0.024 0.012 L1 0.200 0.060 0.008 0.002 θ 14° 6° 14° 6° PPAK3x3 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.01 PDEC3906Z 30V N-Channel MOSFETs PPAK3X3 RECOMMENDED LAND PATTERN unit : mm