PDEB2594P POTENS

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 Handheld Instruments  POL Applications  Battery Protection Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted DFN3x3 Dual Pin Configuration D1/D2 S1 S2 S1 S1 S1 G1 S2 S2 S2 G2 D1/D2

Potens semiconductor corp. Ver.1.02 PDEB2594P 20V Dual N-Channel MOSFETs Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to case --- 4.55 ℃/W Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 20 --- --- V IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=16V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±20 µA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=4.5V , ID=2.4A 6.0 6.7 8 m VGS=3.7V , ID=2.4A 6.5 7.3 9 m VGS=3.1V , ID=2.4A 7.0 8 10.5 m VGS=2.5V , ID=2.4A 8.0 9.2 12 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 0.5 0.65 1.5 V gfs Forward Transconductance VDS=5V , ID=5A --- 15 --- S Dynamic and switching Characteristics Qg Total Gate Charge2,3 VDS=20V , VGS=4.5V , ID=5A --- 13.8 --- nC Qgs Gate-Source Charge2,3 --- 2.1 --- Qgd Gate-Drain Charge2,3 --- 4.5 --- Td(on) Turn-On Delay Time2,3 VDD=15V , VGS=10V , RG=6 ID=5A --- 28 --- ns Tr Rise Time2,3 --- 64 --- Td(off) Turn-Off Delay Time2,3 --- 60 --- Tf Fall Time2,3 --- 55 --- Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 1514 --- pF Coss Output Capacitance --- 178 --- Crss Reverse Transfer Capacitance --- 145 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 24 A ISM Pulsed Source Current --- --- 48 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Thermal Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDEB2594P 20V Dual N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s)

Potens semiconductor corp. Ver.1.02 PDEB2594P 20V Dual N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% VGS 10V / 4.5V Qg QgdQgs Gate Charge Fig.8 Gate Charge Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.02 PDEB2594P 20V Dual N-Channel MOSFETs Symbol Dimensions In Millimeters Min Nom Max A 0.700 0.750 0.800 A1 - - 0.050 A3 0.203Ref. D 2.950 3.000 3.050 E 2.950 3.000 3.050 D2 2.400 2.450 2.500 E2 1.600 1.650 1.700 b 0.250 0.300 0.350 e 0.650BSC L 0.350 0.400 0.450 aaa 0.010 bbb 0.010 ccc 0.010 ddd 0.050 eee 0.080 fff 0.100 DFN3x3 Dual PACKAGE INFORMATION