PDEB09F0BL POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration Applications D D D D G S S  Networking  Load Switch  LED applications D S D D D D G D G S

Potens semiconductor corp. Ver.1.00 PDEB09F0BL 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 100 --- --- V IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=80V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±20 µA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=4A --- 36 43 m VGS=4.5V , ID=3A --- 48 62 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.6 2.5 V Dynamic and switching Characteristics3 Qg Total Gate Charge VDS=50V , VGS=10V , ID=2A --- 7 14 nC VDS=50V , VGS=4.5V , ID=2A --- 4 8 Qgs Gate-Source Charge --- 0.7 1.5 Qgd Gate-Drain Charge --- 2 4 Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=6 ID=2A --- 6 12 ns Tr Rise Time --- 10 20 Td(off) Turn-Off Delay Time --- 20 40 Tf Fall Time --- 13 25 Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 360 700 pF Coss Output Capacitance --- 80 150 Crss Reverse Transfer Capacitance --- 6 12 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.4 ---  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=50V, L=0.1mH, IAS=14A 9.8 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 4 A ISM Pulsed Source Current --- --- 8 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=50V, IS=10A di/dt=100A/µs, TJ=25℃ --- 40 --- ns Qrr Reverse Recovery Charge --- 50 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=20A.,RG=25,Starting TJ=25℃. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.00 PDEB09F0BL 100V N-Channel MOSFETs 0 2 4 6 8 10 VGS=3V VGS=3.5V VGS=4V VGS=4.5V VGS=5V VGS=6V VGS=10V 25 50 75 100 125 150 120 150 0 2 4 6 8 10 Tc=25℃ ID=10A 3 9 15 21 27 33 Tc=25℃ VGS=10V VGS=6V VGS=4.5V VGS=8V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDEB09F0BL 100V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 0.1 1 10 100 Ciss Coss Crss 0 2 4 6 8 ID=2A VDS=50V 0.01 0.1 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDEB09F0BL 100V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.500 0.031 0.019 A2 0.250 0.145 0.010 0.006 b 0.350 0.250 0.014 0.010 D 2.100 1.900 0.083 0.075 D1 1.050 0.800 0.041 0.031 D2 0.430 0.250 0.017 0.010 D3 0.200BSC 0.008BSC D4 0.200BSC 0.008BSC E 2.100 1.900 0.083 0.075 E1 1.250 0.800 0.049 0.031 E2 0.750 0.460 0.029 0.018 e 0.650BSC 0.026BSC L 0.350 0.225 0.014 0.009 DFN2X2-6L PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDEB09F0BL 100V N-Channel MOSFETs RECOMMENDED LAND PATTERN DFN2X2-6L unit : mm 0.65 0.30 0.30 0.60 1.60 1.725 0.325 2.05 0.90 0.95