PDD6986-5 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration ⚫ Motor Drive ⚫ Power Tools ⚫ LED Lighting ⚫ Quick Charger D G S S D G

Potens semiconductor corp. Ver.1.00 PDD6986-5 65V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 65 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=+20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=20A --- 9.6 11.5 m VGS=4.5V , ID=15A --- 18.4 23 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 6 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=30V , VGS=10V , ID=15A --- 15.3 30.6 nC Qgs Gate-Source Charge3 , 4 --- 2.4 5.8 Qgd Gate-Drain Charge3 , 4 --- 5.4 10.8 Td(on) Turn-On Delay Time3 , 4 VDD=30V , VGS=10V , RG=3.3 ID=1A --- 10 20 ns Tr Rise Time3 , 4 --- 13.5 27 Td(off) Turn-Off Delay Time3 , 4 --- 28 56 Tf Fall Time3 , 4 --- 20 40 Ciss Input Capacitance VDS=30V , VGS=0V , F=1MHz --- 945 1890 pF Coss Output Capacitance --- 275 550 Crss Reverse Transfer Capacitance --- 26 52 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.3 ---  Symbol Parameter Conditions Min. Typ. Max. Unit 8IS Continuous Source Current VG=VD=0V , Force Current --- --- 51 A ISM Pulsed Source Current3 --- --- 102 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=10A , di/dt=100A/µs TJ=25℃ --- 35.3 --- ns Qrr Reverse Recovery Charge --- 25.5 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=32A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDD6986-5 65V N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform TJ , Junction Temperature (℃) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) ID, Drain Current (A) VDS ,Drain to Source V oltage (V) RDS(ON) , Turn-On Resistance (mohm) ID , Drain Current (A) Fig.5 Typical Output Characteristics Fig.6 Turn-On Resistance vs. ID

Potens semiconductor corp. Ver.1.00 PDD6986-5 65V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.11 EAS Waveform Fig.10 Switching Time Waveform Normalized Thermal Response (RΘJC) ID , Continuous Drain Current (A) Fig.9 Maximum Safe Operation Area Fig.8 Normalized Transient Response Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Capacitance (pF) VDS , Drain to Source V oltage (V) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDD6986-5 65V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.400 2.200 0.094 0.087 A1 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.400 0.268 0.252 C 0.580 0.450 0.023 0.018 C1 0.580 0.460 0.023 0.018 D 5.500 5.100 0.217 0.201 E 2.386 2.186 0.094 0.086 F 0.940 0.600 0.037 0.024 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.400 0.244 0.213 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° TO252 PACKAGE INFORMATION