PDD6907 POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

S D G  Motor Drive  Power Tools  LED Lighting G D S

Potens semiconductor corp. Ver.1.05 PDD6907 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250µA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 µA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-6A --- 54 68 m VGS=-4.5V , ID=-3A --- 72 85 m VGS(th) Gate Threshold Voltage VGS=VDS , ID=-250µA -1.2 -1.6 -2.2 V △VGS(th) VGS(th) Temperature Coefficient --- 5 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-6A --- 8.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-30V , VGS=-10V , ID=-6A --- 16.4 23 nC Qgs Gate-Source Charge3 , 4 --- 2.8 4 Qgd Gate-Drain Charge3 , 4 --- 3.6 6 Td(on) Turn-On Delay Time3 , 4 VDD=-30V , VGS=-10V , RG=6 ID=-1A --- 8.3 16 ns Tr Rise Time3 , 4 --- 29.6 56 Td(off) Turn-Off Delay Time3 , 4 --- 51.7 98 Tf Fall Time3 , 4 --- 15.6 30 Ciss Input Capacitance VDS=-30V , VGS=0V , F=1MHz --- 870 1260 pF Coss Output Capacitance --- 70 100 Crss Reverse Transfer Capacitance --- 42 60 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 16 32  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -16 A ISM Pulsed Source Current --- --- -52 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-25A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.05 PDD6907 60V P-Channel MOSFETs 25 50 75 100 125 150 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Normalized Gate Threshold V oltage

Potens semiconductor corp. Ver.1.05 PDD6907 60V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.05 PDD6907 60V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.450 2.150 0.096 0.085 A1 1.200 0.900 0.047 0.035 A2 0.250 0.000 0.010 0.000 B 6.800 6.300 0.268 0.248 C 0.600 0.350 0.024 0.014 C1 0.600 0.380 0.024 0.015 D 5.500 5.100 0.217 0.201 D1 5.400 4.950 0.212 0.195 E 2.400 2.000 0.094 0.079 E1 5.650 4.950 0.222 0.194 F 1.150 0.600 0.045 0.024 F1 0.900 0.500 0.035 0.020 L 10.400 9.400 0.409 0.370 L1 3.100 2.400 0.122 0.094 L2 6.300 5.300 0.248 0.209 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° TO252 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.05 PDD6907 60V P-Channel MOSFETs TO252 RECOMMENDED LAND PATTERN unit : mm 6.00 6.50 3.00 2.30 2.30 1.40 6.25