PDD4956 POTENS

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 Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration S G D D G S

Potens semiconductor corp. V e r . 1 . 0 0 PDD4956 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A 6 8.5 11 m VGS=4.5V , ID=10A 8 11 16 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V gfs Forward Transconductance VDS=10V , ID=1A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=4.5V , ID=10A --- 13 26 nC Qgs Gate-Source Charge3 , 4 --- 4 8 Qgd Gate-Drain Charge3 , 4 --- 5.3 10 Td(on) Turn-On Delay Time3 , 4 VDD=20V , VGS=10V , RG=6 ID=1A --- 8 16 ns Tr Rise Time3 , 4 --- 3.2 8 Td(off) Turn-Off Delay Time3 , 4 --- 26.4 52 Tf Fall Time3 , 4 --- 3.8 8 Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 1088 2000 pF Coss Output Capacitance --- 110 200 Crss Reverse Transfer Capacitance --- 80 160 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 3 6  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 42 A ISM Pulsed Source Current --- --- 84 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V DD=25V,VGS=10V,L=0.1mH,IAS=39A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2 % . 4. Essentially independent of operating temperature.

Potens semiconductor corp. V e r . 1 . 0 0 PDD4956 40V N-Channel MOSFETs Normalized Thermal Response (RθJA) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. T C Normalized On Resistance (m) Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold V oltage (V) Fig.3 Normalized V th vs. TJ VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform VDS , Drain to Source V oltage (V)Square Wave Pulse Duration (s) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) TC , Case Temperature (℃)

Potens semiconductor corp. V e r . 1 . 0 0 PDD4956 40V N-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. V e r . 1 . 0 0 PDD4956 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches M A X M I N M A X M I N A 2 . 4 0 0 2 . 2 0 0 0 . 0 9 4 0 . 0 8 7 A1 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6 . 8 0 0 6 . 4 0 0 0 . 2 6 8 0 . 2 5 2 C 0 . 5 8 0 0 . 4 5 0 0 . 0 2 3 0 . 0 1 8 C1 0.580 0.460 0.023 0.018 D 5 . 5 0 0 5 . 1 0 0 0 . 2 1 7 0 . 2 0 1 E 2 . 3 8 6 2 . 1 8 6 0 . 0 9 4 0 . 0 8 6 F 0 . 9 4 0 0 . 6 0 0 0 . 0 3 7 0 . 0 2 4 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.400 0.244 0.213 L3 1.200 0.600 0.047 0.024 θ 9 ° 3 ° 9 ° 3 ° TO252 PACKAGE INFORMATION