PDD4701 POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology TO252-4L Dual Pin Configuration D1/D2 S2 S1 D1/D2

Potens semiconductor corp. Ver.1.03 PDD4701 40V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=6A --- 26 32 m VGS=4.5V , ID=4A --- 36 42 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -3 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 6.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=20V , VGS=4.5V , ID=6A --- 5.2 10 nC Qgs Gate-Source Charge2 , 3 --- 1.2 2.4 Qgd Gate-Drain Charge2 , 3 --- 2.5 5 Td(on) Turn-On Delay Time2 , 3 VDD=20V , VGS=4.5V , RG=25 ID=1A --- 3.2 6 ns Tr Rise Time2 , 3 --- 8.6 16 Td(off) Turn-Off Delay Time2 , 3 --- 18 36 Tf Fall Time2 , 3 --- 6 12 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 420 800 pF Coss Output Capacitance --- 65 120 Crss Reverse Transfer Capacitance --- 40 80 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 15 A ISM Pulsed Source Current --- --- 30 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.03 PDD4701 40V N+P Dual Channel MOSFETs Fig.6 Maximum Safe Operation Area ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.03 PDD4701 40V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-32V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-5A --- 30 40 m VGS=-4.5V , ID=-3A --- 42 52 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 9 --- S Dynamic and switching Characteristics Qg Total Gate Charge5 , 6 VDS=-20V , VGS=-4.5V , ID=-5A --- 9 15 nC Qgs Gate-Source Charge5 , 6 --- 2.5 5 Qgd Gate-Drain Charge5 , 6 --- 3.2 7 Td(on) Turn-On Delay Time5 , 6 VDD=-20V , VGS=-4.5V , RG=25 ID=-1A --- 20 40 ns Tr Rise Time5 , 6 --- 12 24 Td(off) Turn-Off Delay Time5 , 6 --- 46 80 Tf Fall Time5 , 6 --- 6 12 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 1050 1600 pF Coss Output Capacitance --- 110 160 Crss Reverse Transfer Capacitance --- 80 120 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -12 A ISM Pulsed Source Current --- --- -24 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 4. Repetitive Rating : Pulsed width limited by maximum junction temperature. 5. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 6. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDD4701 40V N+P Dual Channel MOSFETs Fig.9 Normalized Vth vs. TJ Normalized Gate Threshold V oltage -VGS , Gate to Source V oltage (V) Fig.10 Gate Charge Waveform Normalized Thermal Response Fig.11 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.12 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Fig.7 Continuous Drain Current vs. TC Normalized On Resistance Fig.8 Normalized RDSON vs. TJ Square Wave Pulse Duration (s) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) TC , Case Temperature (℃) -VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.03 PDD4701 40V N+P Dual Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.400 2.200 0.094 0.087 A2 0.250 0.000 0.010 0.000 B 6.800 6.400 0.268 0.252 C1 0.600 0.450 0.024 0.018 D 5.600 5.000 0.220 0.197 D1 5.400 3.800 0.213 0.150 E 1.27 BSC 0.050 BSC F 0.750 0.450 0.030 0.018 F1 0.800 0.400 0.031 0.016 L 10.200 9.400 0.402 0.370 L1 3.000 2.400 0.118 0.094 L2 6.300 5.400 0.248 0.213 L3 5.200 4.500 0.205 0.177 TO252-4L PACKAGE INFORMATION D E F L L1 L2 B A