PDD3907 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration G S D S D G  MB / VGA / Vcore  POL Applications  Load Switch  LED Application D G S

Potens semiconductor corp. Ver.1.00 PDD3907 30V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-8A --- 16.5 20 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 6.8 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-15V , VGS=-4.5V , ID=-5A --- 11 17 nC Qgs Gate-Source Charge2 , 3 --- 3.4 6 Qgd Gate-Drain Charge2 , 3 --- 4.2 8 Td(on) Turn-On Delay Time2 , 3 VDD=-15V , VGS=-10V , RG=6 ID=-1A --- 5.8 11 ns Tr Rise Time2 , 3 --- 18.8 36 Td(off) Turn-Off Delay Time2 , 3 --- 46.9 89 Tf Fall Time2 , 3 --- 12.3 23 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 1250 1820 pF Coss Output Capacitance --- 160 235 Crss Reverse Transfer Capacitance --- 90 130 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -35 A ISM Pulsed Source Current --- --- -70 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDD3907 30V P-Channel MOSFETs Normalized Gate Threshold V oltage (V) Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ

Potens semiconductor corp. Ver.1.00 PDD3907 30V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.00 PDD3907 30V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.400 2.200 0.094 0.087 A1 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.400 0.268 0.252 C 0.580 0.450 0.023 0.018 C1 0.580 0.460 0.023 0.018 D 5.500 5.100 0.217 0.201 E 2.386 2.186 0.094 0.086 F 0.940 0.600 0.037 0.024 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.400 0.244 0.213 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° TO252 PACKAGE INFORMATION