PDD25ND15 POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 Notebook  Load Switch  LED applications  Li battery pack application TO252 Pin Configuration D G S G D S

Potens semiconductor corp. Ver.1.00 PDD25ND15 150V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 150 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=150V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=8A --- 68 82 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 2 3 4 V Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=75V , VGS=10V , ID=15A --- 30 45 nC Qgs Gate-Source Charge3,4 --- 5.2 8 Qgd Gate-Drain Charge3,4 --- 10.5 15 Td(on) Turn-On Delay Time3,4 VDD=75V , VGS=10V , RG=6 ID=15A --- 10 15 ns Tr Rise Time3,4 --- 10 15 Td(off) Turn-Off Delay Time3,4 --- 20 30 Tf Fall Time3,4 --- 16 35 Ciss Input Capacitance VDS=75V , VGS=0V , F=1MHz --- 1400 2000 pF Coss Output Capacitance --- 75 110 Crss Reverse Transfer Capacitance --- 48 75 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 ---  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=50V, L=0.1mH, IAS=27A 36 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 25 A ISM Pulsed Source Current --- --- 50 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=100V, IS=10A di/dt=100A/µs , TJ=25℃ --- 75 --- ns Qrr Reverse Recovery Charge --- 195 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=37A.,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.00 PDD25ND15 150V N-Channel MOSFETs 0 2 4 6 8 10 VGS=5.5V VGS=6V VGS=6.5V VGS=7V VGS=10V 25 50 75 100 125 150 120 180 240 300 2 4 6 8 10 12 Tc=25℃ ID=8A 120 160 200 5 12 19 26 33 40 Tc=25℃ VGS=10V VGS=6V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDD25ND15 150V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 0.1 1 10 100 Ciss Coss Crss 0 6 12 18 24 30 ID=15A VDS=75V 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDD25ND15 150V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.450 2.150 0.096 0.085 A1 1.200 0.900 0.047 0.035 A2 0.250 0.000 0.010 0.000 B 6.800 6.300 0.268 0.248 C 0.600 0.350 0.024 0.014 C1 0.600 0.380 0.024 0.015 D 5.500 5.100 0.217 0.201 D1 5.400 4.950 0.212 0.195 E 2.400 2.000 0.094 0.079 E1 5.650 4.950 0.222 0.194 F 1.150 0.600 0.045 0.024 F1 0.900 0.500 0.035 0.020 L 10.400 9.400 0.409 0.370 L1 3.100 2.400 0.122 0.094 L2 6.300 5.300 0.248 0.209 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° TO252 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDD25ND15 150V N-Channel MOSFETs TO252 RECOMMENDED LAND PATTERN unit : mm 6.00 6.50 3.00 2.30 2.30 1.40 6.25