PDD0958A POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration D G S D G S  Networking  Load Switch  LED applications

Potens semiconductor corp. Ver.1.01 PDD0958A 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=6A --- 65 85 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V \`gfs Forward Transconductance VDS=10V , ID=3A --- 6 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=50V , VGS=10V , ID=6A --- 10.5 20 nC Qgs Gate-Source Charge2 , 3 --- 4.8 9 Qgd Gate-Drain Charge2 , 3 --- 2.9 6 Td(on) Turn-On Delay Time2 , 3 VDD=50V , VGS=10V , RG=25 ID=1A --- 73 140 ns Tr Rise Time2 , 3 --- 36 72 Td(off) Turn-Off Delay Time2 , 3 --- 124 240 Tf Fall Time2 , 3 --- 25 50 Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 615 1200 pF Coss Output Capacitance --- 47 80 Crss Reverse Transfer Capacitance --- 29 60 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.1 4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 15 A ISM Pulsed Source Current --- --- 30 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time2 IS=1A , dI/dt=100A/µs TJ=25℃ --- 18.5 --- ns Qrr Reverse Recovery Charge2 --- 16 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. 4. VDD=50V,VGS=10V,L=0.1mH,IAS=19A.,RG=25,Starting TJ=25℃. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDD0958A 100V N-Channel MOSFETs ID , Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance (m) Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage (V) Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response (RθJC) ID , Continuous Drain Current (A) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s)

Potens semiconductor corp. Ver.1.01 PDD0958A 100V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.01 PDD0958A 100V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.20 2.40 0.087 0.094 A1 0.91 1.11 0.036 0.044 A2 0.00 0.15 0.000 0.006 B 6.50 6.70 0.256 0.264 C 0.46 0.580 0.018 0.230 C1 0.46 0.580 0.018 0.030 D 5.10 5.46 0.201 0.215 E 2.186 2.386 0.086 0.094 F 0.74 0.94 0.029 0.037 F1 0.660 0.860 0.026 0.034 L 9.80 10.40 0.386 0.409 L1 2.9REF 0.114REF L2 6.00 6.20 0.236 0.244 L3 0.60 1.00 0.024 0.039 θ 3° 9° 3° 9° TO252 PACKAGE INFORMATION