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  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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 High efficient switched mode power supplies  TV Power  Adapter/charger  Server Power  PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available D S G D G S

Potens semiconductor corp. Ver.1.00 PDD05N50 500V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 500 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.5 --- V/℃ IDSS Drain-Source Leakage Current VDS=500V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=400V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=2A --- 1.4 1.8 Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 3 4 5 V △VGS(th) VGS(th) Temperature Coefficient --- -8 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=1A --- 3.6 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=400V , VGS=10V , ID=1A --- 16.2 25 nC Qgs Gate-Source Charge3,4 --- 4.6 7 Qgd Gate-Drain Charge3,4 --- 4.9 10 Td(on) Turn-On Delay Time3,4 VDD=300V , VGS=10V , RG=25Ω ID=1A --- 22 42 ns Tr Rise Time3,4 --- 14 27 Td(off) Turn-Off Delay Time3,4 --- 32 61 Tf Fall Time3,4 --- 26 49 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 740 1080 pF Coss Output Capacitance --- 48 70 Crss Reverse Transfer Capacitance --- 4.4 10 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.4 4.8 Ω Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 5 A ISM Pulsed Source Current --- --- 20 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 VGS=0V,IS=1A , dI/dt=100A/µs TJ=25℃ --- --- --- ns Qrr Reverse Recovery Charge3 --- --- --- uC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=1mH,IAS=4.6A.,RG=25Ω,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDD05N50 500V N-Channel MOSFETs Normalized Thermal Response (RθJC) ID , Continuous Drain Current (A) ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (Ω) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source Voltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.00 PDD05N50 500V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.00 PDD05N50 500V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.20 2.40 0.087 0.094 A1 0.91 1.11 0.036 0.044 A2 0.00 0.15 0.000 0.006 B 6.50 6.70 0.256 0.264 C 0.46 0.580 0.018 0.230 C1 0.46 0.580 0.018 0.030 D 5.10 5.46 0.201 0.215 E 2.186 2.386 0.086 0.094 F 0.74 0.94 0.029 0.037 F1 0.660 0.860 0.026 0.034 L 9.80 10.40 0.386 0.409 L1 2.9REF 0.114REF L2 6.00 6.20 0.236 0.244 L3 0.60 1.00 0.024 0.039 θ 3° 9° 3° 9° TO252 PACKAGE INFORMATION