PDC8974AX POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Networking  Load Switch  LED applications  Quick Charger D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.02 PDC8974AX 80V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=64V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 2.9 3.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V gfs Forward Transconductance VDS=10V , ID=5A --- 19 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=40V , VGS=10V , ID=70A --- 95.5 143 nC Qgs Gate-Source Charge3 , 4 --- 23.5 35 Qgd Gate-Drain Charge3 , 4 --- 32 48 Td(on) Turn-On Delay Time3 , 4 VDD=40V , VGS=10V , RG=6 ID=70A --- 22 33 ns Tr Rise Time3 , 4 --- 15 23 Td(off) Turn-Off Delay Time3 , 4 --- 40 60 Tf Fall Time3 , 4 --- 19 29 Ciss Input Capacitance VDS=40V , VGS=0V , F=1MHz --- 5510 8265 pF Coss Output Capacitance --- 1200 1800 Crss Reverse Transfer Capacitance --- 70 100 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.5 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 130 A ISM Pulsed Source Current --- --- 260 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=50V, IS=10A , dI/dt=100A/µs , TJ=25℃ --- 65 --- nS Qrr Reverse Recovery Charge --- 130 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=90A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC8974AX 80V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response ID , Drain Current (A) TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s)

Potens semiconductor corp. Ver.1.02 PDC8974AX 80V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.02 PDC8974AX 80V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION