PDC70N11BX-5 POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Motor Drive  Power Tools  LED Lighting D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.00 PDC70N11BX-5 115V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 115 --- --- V IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=100V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=15A --- 6.7 8 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V gfs Forward Transconductance VDS=10V , ID=3A --- 16 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=60V , VGS=10V , ID=35A --- 39 60 nC VDS=60V , VGS=4.5V , ID=35A --- 21 30 Qgs Gate-Source Charge3 , 4 --- 5.2 10 Qgd Gate-Drain Charge3 , 4 --- 9.7 15 Td(on) Turn-On Delay Time3 , 4 VDS=60V , VGS=10V , RG=6 ID=35A --- 12 18 ns Tr Rise Time3 , 4 --- 8 12 Td(off) Turn-Off Delay Time3 , 4 --- 14 20 Tf Fall Time3 , 4 --- 16 25 Ciss Input Capacitance VDS=60V , VGS=0V , F=1MHz --- 2355 3550 pF Coss Output Capacitance --- 260 400 Crss Reverse Transfer Capacitance --- 4 6 Rg Gate Resistance VGS=0V , VDS=0V , F=1MHz --- 1.5 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 70 A ISM Pulsed Source Current --- --- 140 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time3 VR=100V, IS=10A dI/dt=100A/µs , TJ=25℃ --- 80 --- ns Qrr Reverse Recovery Charge3 --- 170 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=40A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDC70N11BX-5 115V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0 2 4 6 8 10 VGS=3V VGS=3.3V VGS=3.5V VGS=3.7V VGS=10V 0 2 4 6 8 10 Tc=25℃ ID=15A 5 18 31 44 57 70 Tc=25℃ VGS=4.5V VGS=6V VGS=10V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDC70N11BX-5 115V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 8 16 24 32 40 ID=35A VDS=60V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 0.01 0.1 100 1000 10000 0.1 1 10 100 Ciss Coss Crss VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDC70N11BX-5 115V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDC70N11BX-5 115V N-Channel MOSFETs PPAK5X6 RECOMMENDED LAND PATTERN unit : mm