PDC6988BYZ POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Networking  Load Switch  LED applications  Quick Charger D D D S S

Potens semiconductor corp. Ver.1.00 PDC6988BYZ 60V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 60 --- --- V IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=48V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=15A --- 11 13 m VGS=4.5V , ID=12A --- 14.5 19 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.6 2.5 V Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=30V , VGS=10V , ID=20A --- 11.5 18 nC VDS=30V , VGS=4.5V , ID=20A --- 6 10 Qgs Gate-Source Charge3 , 4 --- 1 1.5 Qgd Gate-Drain Charge3 , 4 --- 2.5 4 Td(on) Turn-On Delay Time3 , 4 VDD=30V , VGS=10V , RG=6 ID=20A --- 8.5 15 ns Tr Rise Time3 , 4 --- 12 20 Td(off) Turn-Off Delay Time3 , 4 --- 25 40 Tf Fall Time3 , 4 --- 15 25 Ciss Input Capacitance VDS=30V , VGS=0V , F=1MHz --- 600 900 pF Coss Output Capacitance --- 150 220 Crss Reverse Transfer Capacitance --- 11.5 18 Rg Gate resistance VGS=0V , VDS=0V , F=1MHz --- 0.9 ---  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=19A 18 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 35 A ISM Pulsed Source Current --- --- 70 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=50V, IS=10A , dI/dt=100A/µs , TJ=25℃ --- 35 --- ns Qrr Reverse Recovery Charge --- 20 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.00 PDC6988BYZ 60V N-Channel MOSFETs 0 2 4 6 8 10 VGS=2.7V VGS=3V VGS=3.3V VGS=3.7V VGS=4V VGS=4.3V VGS=10V 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=15A 5 11 17 23 29 35 Tc=25℃ VGS=4.5V VGS=6V VGS=8V VGS=10V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDC6988BYZ 60V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 0.1 1 10 Ciss Coss Crss 0 3 6 9 12 ID=20A VDS=30V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDC6988BYZ 60V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 b 0.350 0.250 0.014 0.010 c 0.250 0.100 0.010 0.004 D 3.500 3.050 0.138 0.120 D1 3.200 2.900 0.126 0.114 D2 1.950 1.350 0.077 0.053 E 3.400 3.000 0.134 0.118 E1 3.300 2.900 0.130 0.114 E2 2.600 2.350 0.102 0.093 e 0.65BSC 0.026BSC H 0.750 0.300 0.030 0.012 L 0.600 0.300 0.024 0.012 L1 0.200 0.060 0.008 0.002 θ 14° 6° 14° 6° PPAK3x3 PACKAGE INFORMATION Pin1 Pin8 Pin1 Pin8

Potens semiconductor corp. Ver.1.00 PDC6988BYZ 60V N-Channel MOSFETs PPAK3X3 RECOMMENDED LAND PATTERN unit : mm